发明申请
US20050092599A1 Apparatus and process for high rate deposition of rutile titanium dioxide
审中-公开
金红石二氧化钛高速沉积的装置和工艺
- 专利标题: Apparatus and process for high rate deposition of rutile titanium dioxide
- 专利标题(中): 金红石二氧化钛高速沉积的装置和工艺
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申请号: US10959504申请日: 2004-10-07
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公开(公告)号: US20050092599A1公开(公告)日: 2005-05-05
- 发明人: Norm Boling , Eric Krisl , Mark George , Miles Rains , H. Gray
- 申请人: Norm Boling , Eric Krisl , Mark George , Miles Rains , H. Gray
- 主分类号: C23C14/00
- IPC分类号: C23C14/00 ; C23C14/08 ; C23C14/32 ; C23C14/34 ; C23C14/35
摘要:
An apparatus and process for forming thin films of titanium dioxide in the rutile phase by reactive sputter deposition. In one aspect, a sputtering target and auxiliary plasma generator are positioned in a coating station in a sputtering chamber so that the titanium deposited on a substrate passing through the coating chamber is oxidized by exposure to the auxiliary plasma generated by the plasma generator commingled with the sputter plasma. The plasma may include monatomic oxygen to assist in the formation of rutile titanium dioxide. The target, or a pair of targets may also be operated from pulsed d.c. or a.c. power supplies.
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