Invention Application
- Patent Title: Reducing dopant losses during annealing processes
- Patent Title (中): 在退火过程中减少掺杂剂损失
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Application No.: US10983257Application Date: 2004-11-04
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Publication No.: US20050093034A1Publication Date: 2005-05-05
- Inventor: Donald Miles
- Applicant: Donald Miles
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/78 ; H01L29/76 ; H01L31/062 ; H01L31/119
Abstract:
A method of reducing dopant losses is provided. The method includes providing a transistor structure having a first region, implanting a dopant into the first region, depositing a control layer adjacent the first region, and performing a first annealing process on the transistor structure. The control layer is operable to prevent at least a portion of the dopant in the first region from diffusing out of the first region toward the control layer during the first annealing process.
Information query
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