Invention Application
US20050098428A1 Silver selenide film stoichiometry and morphology control in sputter deposition 失效
硒化银膜在溅射沉积中的化学计量和形态控制

Silver selenide film stoichiometry and morphology control in sputter deposition
Abstract:
A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.
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