发明申请
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US10935429申请日： 2004-09-08
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公开(公告)号： US20050106874A1公开(公告)日： 2005-05-19
- 发明人: Yukiteru Matsui , Gaku Minamihaba , Hiroyuki Yano , Atsushi Shigeta
- 申请人： Yukiteru Matsui , Gaku Minamihaba , Hiroyuki Yano , Atsushi Shigeta
- 优先权： JPP2003-321474 20030912; JPP2004-258030 20040906
- 主分类号： H01L21/304
- IPC分类号： H01L21/304 ; C09G1/02 ; H01L21/302 ; H01L21/3105 ; H01L21/316 ; H01L21/461
摘要：
A method of manufacturing a semiconductor device includes depositing a SiO2 film on the substrate having formed thereon a wiring pattern; coating a SOG film on the SiO2 film; and polishing the SOG film using a slurry containing cerium oxide and cationic surfactant with a chemical-mechanical polishing process.
公开/授权文献
- US07700489B2 Method of manufacturing a semiconductor device 公开/授权日：2010-04-20
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