发明申请
- 专利标题: Silicon-based Schottky barrier infrared optical detector
- 专利标题(中): 硅基肖特基势垒红外光检测器
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申请号: US10990725申请日: 2004-11-17
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公开(公告)号: US20050110108A1公开(公告)日: 2005-05-26
- 发明人: Vipulkumar Patel , Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Soham Pathak , David Piede , Kalpendu Shastri , Katherine Yanushefski
- 申请人: Vipulkumar Patel , Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Soham Pathak , David Piede , Kalpendu Shastri , Katherine Yanushefski
- 专利权人: SiOptical, Inc.
- 当前专利权人: SiOptical, Inc.
- 主分类号: G02B6/12
- IPC分类号: G02B6/12 ; G02B6/122 ; H01L31/00 ; H01L31/0224 ; H01L31/0232 ; H01L31/0392 ; H01L31/108 ; H01L31/153
摘要:
A silicon-based IR photodetector is formed within a silicon-on-insulator (SOI) structure by placing a metallic strip (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer (i.e., “planar SOI layer”) of the SOI structure, the planar SOI layer comprising a thickness of less than one micron. Room temperature operation of the photodetector is accomplished as a result of the relatively low dark current associated with the SOI-based structure and the ability to use a relatively small surface area silicide strip to collect the photocurrent. The planar SOI layer may be doped, and the geometry of the silicide strip may be modified, as desired, to achieve improved results over prior art silicon-based photodetectors.
公开/授权文献
- US07358585B2 Silicon-based Schottky barrier infrared optical detector 公开/授权日:2008-04-15