发明申请
- 专利标题: Self-alignment scheme for enhancement of CPP-GMR
- 专利标题(中): 用于增强CPP-GMR的自对准方案
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申请号: US10718372申请日: 2003-11-20
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公开(公告)号: US20050111143A1公开(公告)日: 2005-05-26
- 发明人: Jei-Wei Chang , Chao-Peng Chen , Min Li , Kochan Ju
- 申请人: Jei-Wei Chang , Chao-Peng Chen , Min Li , Kochan Ju
- 专利权人: Headway Technologies, Inc.
- 当前专利权人: Headway Technologies, Inc.
- 主分类号: G11B5/127
- IPC分类号: G11B5/127 ; G11B5/33
摘要:
A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.
公开/授权文献
- US07118680B2 Self-alignment scheme for enhancement of CPP-GMR 公开/授权日:2006-10-10
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