发明申请
US20050111143A1 Self-alignment scheme for enhancement of CPP-GMR 失效
用于增强CPP-GMR的自对准方案

Self-alignment scheme for enhancement of CPP-GMR
摘要:
A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.
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