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    Self-alignment scheme for enhancement of CPP-GMR
    1.
    发明授权
    Self-alignment scheme for enhancement of CPP-GMR 失效
    用于增强CPP-GMR的自对准方案

    公开(公告)号：US07118680B2

    公开(公告)日：2006-10-10

    申请号：US10718372

    申请日：2003-11-20

    申请人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

    发明人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

    IPC分类号： G11B5/39

    CPC分类号： G11B5/1278 ,  Y10T29/49052

    摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.

    摘要翻译： 提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二 用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。 所制造的传感器具有降低的电阻和增加的灵敏度。

    Self-alignment scheme for enhancement of CPP-GMR
    2.
    发明申请
    Self-alignment scheme for enhancement of CPP-GMR 失效
    用于增强CPP-GMR的自对准方案

    公开(公告)号：US20050111143A1

    公开(公告)日：2005-05-26

    申请号：US10718372

    申请日：2003-11-20

    申请人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

    发明人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/1278 ,  Y10T29/49052

    摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.

    摘要翻译： 提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二 用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。 所制造的传感器具有降低的电阻和增加的灵敏度。

    CPP head with parasitic shunting reduction
    3.
    发明授权
    CPP head with parasitic shunting reduction 有权
    CPP头与寄生分流减少

    公开(公告)号：US07279269B2

    公开(公告)日：2007-10-09

    申请号：US10734422

    申请日：2003-12-12

    申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

    摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

    摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

    CPP head with parasitic shunting reduction
    4.
    发明授权
    CPP head with parasitic shunting reduction 有权
    CPP头与寄生分流减少

    公开(公告)号：US07864490B2

    公开(公告)日：2011-01-04

    申请号：US11901584

    申请日：2007-09-18

    申请人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    发明人： Jeiwei Chang ,  Stuart Kao ,  Chao Peng Chen ,  Chunping Luo ,  Kochan Ju ,  Min Li

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3163 ,  G11B5/398 ,  Y10T428/1171

    摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

    摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。 由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。 然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部 部分精确地集中在其上。

    Shield structure design to improve the stability of an MR head
    6.
    发明授权
    Shield structure design to improve the stability of an MR head 有权
    盾构结构设计提高MR头的稳定性

    公开(公告)号：US07180712B1

    公开(公告)日：2007-02-20

    申请号：US09513873

    申请日：2000-02-28

    申请人： Min Li ,  Simon H. Liao ,  Cheng T. Horng ,  Kochan Ju

    发明人： Min Li ,  Simon H. Liao ,  Cheng T. Horng ,  Kochan Ju

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/112 ,  G11B5/3912 ,  H01L43/08

    摘要： A method for forming a laminated shield to improve the stability and performance of an MR read head and the MR read head formed using that shield. The shield consists of two layers of ferromagnetic material separated by a layer of ruthenium, allowing the ferromagnetic layers to form an antiferromagnetic configuration by means of a quantum mechanical exchange interaction. The antiferromagnetic configuration has a stable domain structure and a magnetization that forms closed loops around the shield edges thereby reducing noise in the readback signal and reducing disturbances to the magnetic state of the sensor element.

    摘要翻译： 一种用于形成层叠屏蔽以提高使用该屏蔽形成的MR读取头和MR读取头的稳定性和性能的方法。 屏蔽由两层铁磁材料组成，由一层钌分离，允许铁磁层通过量子力学交换相互作用形成反铁磁性结构。 反铁磁构造具有稳定的畴结构和磁化，其在屏蔽边缘周围形成闭环，从而降低回读信号中的噪声并减少对传感器元件的磁状态的干扰。

    Method of increasing CPP GMR in a spin valve structure
    7.
    发明授权
    Method of increasing CPP GMR in a spin valve structure 有权
    在自旋阀结构中增加CPP GMR的方法

    公开(公告)号：US07016168B2

    公开(公告)日：2006-03-21

    申请号：US10718373

    申请日：2003-11-20

    申请人： Min Li ,  Kochan Ju ,  Youfeng Zheng ,  Simon Liao ,  Jeiwei Chang

    发明人： Min Li ,  Kochan Ju ,  Youfeng Zheng ,  Simon Liao ,  Jeiwei Chang

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

    摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the sensor comprising a GMR stack having a substantially square lateral cross-section, a Cu spacer layer of smaller square cross-section formed centrally on the GMR stack and a capped ferromagnetic free layer of substantially square, but even smaller cross-sectional area, formed centrally on the spacer layer. The stepped, reduced area geometry of the sensor provides a significant improvement in its GMR ratio (DR/R), a reduced resistance, R, and elimination of Joule heating hot-spots in regions of high resistance such as the antiferromagnetic pinning layer and its seed layer.

    摘要翻译： 提供合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器，该传感器包括具有基本正方形横截面的GMR叠层，较小方形截面的Cu间隔层， 在GMR堆叠上形成中心的截面，以及在间隔层中央形成基本上正方形，但是更小的横截面积的封盖铁磁自由层。 传感器的阶梯式减小的面积几何形状提供了其GMR比（DR / R），电阻降低，R和消除高电阻区域中的焦耳加热热点的显着改进，例如反铁磁钉扎层及其 种子层。

    Synthetic free layer for CPP GMR
    8.
    发明申请
    Synthetic free layer for CPP GMR 失效

    公开(公告)号：US20060007608A1

    公开(公告)日：2006-01-12

    申请号：US11229155

    申请日：2005-09-16

    申请人： Min Li ,  Simon Liao ,  Kochan Ju

    发明人： Min Li ,  Simon Liao ,  Kochan Ju

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/10

    摘要： Reduction of the free layer thickness in GMR devices is desirable in order to meet higher signal requirements, besides improving the GMR ratio itself. However, thinning of the free layer reduces the GMR ratio and leads to poor thermal stability. This problem has been overcome by making AP2 from an inverse GMR material and by changing the free layer from a single uniform layer to a ferromagnetic layer AFM (antiferromagnetically) coupled to a layer of inverse GMR material. Examples of alloys that may be used for the inverse GMR materials include FeCr, NiFeCr, NiCr, CoCr, CoFeCr, and CoFeV. Additionally, the ruthenium layer normally used to effect antiferromagnetic coupling can be replaced by a layer of chromium. A process to manufacture the structure is also described.