发明申请
- 专利标题: Vapor deposition of silicon dioxide nanolaminates
- 专利标题(中): 二氧化硅纳米层压板的气相沉积
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申请号: US10951464申请日: 2004-09-27
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公开(公告)号: US20050112282A1公开(公告)日: 2005-05-26
- 发明人: Roy Gordon , Jill Becker , Dennis Hausmann
- 申请人: Roy Gordon , Jill Becker , Dennis Hausmann
- 申请人地址: US MA Cambridge
- 专利权人: President and fellows of Harvard College
- 当前专利权人: President and fellows of Harvard College
- 当前专利权人地址: US MA Cambridge
- 主分类号: C23C16/42
- IPC分类号: C23C16/42 ; C23C16/04 ; C23C16/40 ; C23C16/44 ; C23C16/455 ; H01L21/31 ; H01L21/316 ; H01L21/469
摘要:
This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.
公开/授权文献
- US08008743B2 Vapor deposition of silicon dioxide nanolaminates 公开/授权日:2011-08-30
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