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    VAPOR DEPOSITION OF SILICON DIOXIDE NANOLAMINATES
    2.
    发明申请
    VAPOR DEPOSITION OF SILICON DIOXIDE NANOLAMINATES 有权
    二氧化硅纳米酰胺的蒸气沉积

    公开(公告)号：US20110281417A1

    公开(公告)日：2011-11-17

    申请号：US13189283

    申请日：2011-07-22

    申请人： Roy G. GORDON ,  Jill Becker ,  Dennis Hausmann

    发明人： Roy G. GORDON ,  Jill Becker ,  Dennis Hausmann

    IPC分类号： H01L21/762 ,  H01L21/316 ,  B82Y40/00

    CPC分类号： C23C16/45534 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/403 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/45555

    摘要： This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.

    摘要翻译： 本发明涉及在固体基底上薄膜沉积的材料和方法。 通过含铝化合物与硅烷醇的反应将二氧化硅/氧化铝纳米层压材料沉积在加热的基底上。 纳米层压板具有非常均匀的厚度和在具有40:1以上的纵横比的孔中的优异的台阶覆盖。 这些胶片是透明和良好的电绝缘体。 本发明还涉及用于生产用于微电子器件中的电导体的绝缘中的改进的多孔电介质材料的材料和方法，特别是通过用于生产半孔电介质材料的材料和工艺，其中表面孔隙率被显着减少或去除，同时保持内部孔隙度 以保持整个介电材料的期望的低k值。 本发明还可用于选择性地填充具有低k介电材料的窄沟槽，同时避免任何电介质沉积在沟槽外部的表面区域上。

    Vapor deposition systems and methods
    3.
    发明申请
    Vapor deposition systems and methods 有权
    气相沉积系统和方法

    公开(公告)号：US20060021573A1

    公开(公告)日：2006-02-02

    申请号：US11167570

    申请日：2005-06-27

    申请人： Douwe Monsma ,  Jill Becker

    发明人： Douwe Monsma ,  Jill Becker

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45525 ,  B01D53/0407 ,  B01D2258/0216 ,  C23C16/44 ,  C23C16/4412 ,  C23C16/45544

    摘要： Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages.

    摘要翻译： 提供蒸气沉积系统和与之相关的方法。 该系统可以被设计成包括能够促进高质量沉积的特征; 简化制造，修改和使用; 以及减少系统的占地面积等优点。

    Vapor deposition of silicon dioxide nanolaminates
    5.
    发明申请
    Vapor deposition of silicon dioxide nanolaminates 有权
    二氧化硅纳米层压板的气相沉积

    公开(公告)号：US20050112282A1

    公开(公告)日：2005-05-26

    申请号：US10951464

    申请日：2004-09-27

    申请人： Roy Gordon ,  Jill Becker ,  Dennis Hausmann

    发明人： Roy Gordon ,  Jill Becker ,  Dennis Hausmann

    IPC分类号： C23C16/42 ,  C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/31 ,  H01L21/316 ,  H01L21/469

    CPC分类号： C23C16/45534 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/403 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/45555

    摘要： This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.

    摘要翻译： 本发明涉及在固体基底上薄膜沉积的材料和方法。 通过含铝化合物与硅烷醇的反应将二氧化硅/氧化铝纳米层压材料沉积在加热的基底上。 纳米层压板具有非常均匀的厚度和在具有40:1以上的纵横比的孔中的优异的台阶覆盖。 这些胶片是透明和良好的电绝缘体。 本发明还涉及用于生产用于微电子器件中的电导体的绝缘中的改进的多孔电介质材料的材料和方法，特别是通过用于生产半孔介电材料的材料和工艺，其中表面孔隙率被显着地减少或去除，同时保持内部孔隙率 以保持整个介电材料的期望的低k值。 本发明还可用于选择性地填充具有低k介电材料的窄沟槽，同时避免任何电介质沉积在沟槽外部的表面区域上。

    Vapor deposition of silicon dioxide nanolaminates
    6.
    发明授权
    Vapor deposition of silicon dioxide nanolaminates 有权
    二氧化硅纳米层压板的气相沉积

    公开(公告)号：US08008743B2

    公开(公告)日：2011-08-30

    申请号：US10951464

    申请日：2004-09-27

    申请人： Roy G. Gordon ,  Jill Becker ,  Dennis Hausmann

    发明人： Roy G. Gordon ,  Jill Becker ,  Dennis Hausmann

    IPC分类号： H01L21/70

    CPC分类号： C23C16/45534 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/403 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/45555

    摘要： This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.

    摘要翻译： 本发明涉及在固体基底上薄膜沉积的材料和方法。 通过含铝化合物与硅烷醇的反应将二氧化硅/氧化铝纳米层压材料沉积在加热的基底上。 纳米层压板具有非常均匀的厚度和在具有40:1以上的纵横比的孔中的优异的台阶覆盖。 这些胶片是透明和良好的电绝缘体。 本发明还涉及用于生产用于微电子器件中的电导体的绝缘中的改进的多孔电介质材料的材料和方法，特别是通过用于生产半孔电介质材料的材料和工艺，其中表面孔隙率被显着减少或去除，同时保持内部孔隙度 以保持整个介电材料的期望的低k值。 本发明还可用于选择性地填充具有低k介电材料的窄沟槽，同时避免任何电介质沉积在沟槽外部的表面区域上。

    Vapor deposition of tungsten nitride
    7.
    发明授权
    Vapor deposition of tungsten nitride 有权
    氮化钨的蒸镀

    公开(公告)号：US07560581B2

    公开(公告)日：2009-07-14

    申请号：US10520456

    申请日：2003-07-09

    申请人： Roy G. Gordon ,  Seigi Suh ,  Jill Becker

    发明人： Roy G. Gordon ,  Seigi Suh ,  Jill Becker

    IPC分类号： C07F11/00 ,  C23C16/34 ,  H01L21/44

    CPC分类号： C23C16/45553 ,  C07F11/005 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45542 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/76841 ,  H01L28/60 ,  H01L29/4966

    摘要： Tungsten nitride films were deposited on heated substrates by the reaction of vapors of tungsten bis(alkylimide)bis(dialkylamide) and a Lewis base or a hydrogen plasma. For example, vapors of tungsten bis(tert-butylimide)bis(dimethylamide) and ammonia gas supplied in alternate doses to surfaces heated to 300° C. produced coatings of tungsten nitride having very uniform thickness and excellent step coverage in holes with aspect ratios up to at least 40:1. The films are metallic and good electrical conductors. Suitable applications in microelectronics include barriers to the diffusion of copper and electrodes for capacitors. Similar processes deposit molybdenum nitride, which is suitable for layers alternating with silicon in X-ray mirrors.

    摘要翻译： 通过二（烷基酰亚胺）双（二烷基酰胺）二氧化钨和路易斯碱或氢等离子体的蒸气的反应，将氮化钨膜沉积在加热的基底上。 例如，双（叔丁基酰亚胺）双（二甲基酰胺）二氧化钨和氨气的蒸气以加热到300℃的表面的交替剂量供应，产生具有非常均匀厚度的氮化钨涂层，并且在具有纵横比的孔中具有优异的台阶覆盖 至少40：1。 这些膜是金属和良好的电导体。 在微电子学中的适用应用包括铜和电容器电极的扩散障碍。 类似的方法沉积氮化钼，其适合于在X射线反射镜中与硅交替的层。