发明申请
- 专利标题： Method of producing semiconductor integrated circuit device and method of producing multi-chip module
- 专利标题（中）： 半导体集成电路器件的制造方法及其制造方法
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申请号： US11022758申请日： 2004-12-28
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公开(公告)号： US20050112504A1公开(公告)日： 2005-05-26
- 发明人: Tsuneo Terasawa , Toshihiko Tanaka , Ko Miyazaki , Norio Hasegawa , Kazutaka Mori
- 申请人： Tsuneo Terasawa , Toshihiko Tanaka , Ko Miyazaki , Norio Hasegawa , Kazutaka Mori
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 优先权： JP2000-246466 20000815
- 主分类号： G03F1/54
- IPC分类号： G03F1/54 ; G03F1/56 ; G03F7/20 ; H01L21/768 ; G03F7/00
摘要：
Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.
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