发明申请
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10957747申请日： 2004-10-05
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公开(公告)号： US20050116310A1公开(公告)日： 2005-06-02
- 发明人: Kazuo Nishi , Hiroki Adachi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara , Tomoyuki Aoki , Eiji Sugiyama , Hironobu Takahashi
- 申请人： Kazuo Nishi , Hiroki Adachi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara , Tomoyuki Aoki , Eiji Sugiyama , Hironobu Takahashi
- 优先权： JP2003-347676 20031006
- 主分类号： H01L23/538
- IPC分类号： H01L23/538 ; H01L21/00 ; H01L23/00 ; H01L27/06 ; H01L27/12 ; H01L27/14 ; H01L27/144 ; H01L27/146 ; H01L29/78 ; H01L29/786 ; H01L29/792 ; H01L29/861 ; H01L31/00 ; H01L31/02 ; H01L31/0203 ; H01L31/0392 ; H01L31/048 ; H01L31/18
摘要：
The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
公开/授权文献
- US07335951B2 Semiconductor device and method for manufacturing the same 公开/授权日：2008-02-26
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