发明申请
US20050118773A1 Method of producing an integrated capacitor and a memory field
审中-公开
集成电容器和存储器场的制造方法
- 专利标题： Method of producing an integrated capacitor and a memory field
- 专利标题（中）： 集成电容器和存储器场的制造方法
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申请号： US11033577申请日： 2005-01-12
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公开(公告)号： US20050118773A1公开(公告)日： 2005-06-02
- 发明人: Karlheinz Muller
- 申请人： Karlheinz Muller
- 优先权： DE19646208.8 19961108
- 主分类号： H01G4/33
- IPC分类号： H01G4/33 ; H01G4/10 ; H01G4/30 ; H01L21/02 ; H01L21/822 ; H01L21/8242 ; H01L27/04 ; H01L27/108 ; H01L21/20
摘要：
A capacitor for an integrated circuit with microstructure has a first and a second electrode separated by a dielectric layer. The dielectric layer is produced during the structuring of the first electrodes by an etching process. The dielectric layer comprises a polymer structure which is formed during the etching process, and/or etching products of the electrode metal. The first electrode may be cylindrical and surrounded by a hollow-cylindrical dielectric layer. The capacitor may be integrated in a memory field with a multiplicity of such capacitors.
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