发明申请
US20050118821A1 Slurry for CMP, polishing method and method of manufacturing semiconductor device
有权
用于CMP的浆料，抛光方法和制造半导体器件的方法
- 专利标题： Slurry for CMP, polishing method and method of manufacturing semiconductor device
- 专利标题（中）： 用于CMP的浆料，抛光方法和制造半导体器件的方法
-
申请号： US10932096申请日： 2004-09-02
-
公开(公告)号： US20050118821A1公开(公告)日： 2005-06-02
- 发明人: Gaku Minamihaba , Dai Fukushima , Susumu Yamamoto , Hiroyuki Yano
- 申请人： Gaku Minamihaba , Dai Fukushima , Susumu Yamamoto , Hiroyuki Yano
- 优先权： JP2003-398163 20031127
- 主分类号： B24B37/00
- IPC分类号： B24B37/00 ; B82Y10/00 ; B82Y99/00 ; C09G1/02 ; C09G1/16 ; C09K3/14 ; C23F3/06 ; H01L21/302 ; H01L21/304 ; H01L21/321 ; H01L21/461 ; H01L21/768
摘要：
Disclosed is a CMP slurry comprising a Cu oxidizing agent, a complexing agent for forming a Cu organic complex, a surfactant, an inorganic particle, and a resin particle containing polystyrene, having on the surface thereof a functional group of the same kind of polarity as that of the inorganic particle and having an average particle diameter of less than 100 nm, the resin particle being incorporated at a concentration of less than 1% by weight.
公开/授权文献
信息查询
