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发明申请
US20050121659A1 Non-volatile memory and the fabrication method thereof 有权
非易失性存储器及其制造方法

Non-volatile memory and the fabrication method thereof
摘要：
A non-volatile memory, which comprises an insulating substrate (11) that has a first electrode (18) that extends through the substrate from the front surface to the rear surface thereof; a second electrode (13) that is formed on one side of the insulating substrate (11); and a recording layer (12) that is clamped between the first electrode (18) and the second electrode (13) and whose resistance value varies when an electric pulse is applied across the first electrode (18) and the second electrode (13); wherein the insulating substrate (11) has a layered structure composed of an organic dielectric thin film (112) and an inorganic dielectric layer (111) that is thinner than the organic dielectric thin film (112); with the recording layer (12) being formed on the side on which the inorganic dielectric layer is formed. Use of this non-volatile memory increases the possible number of data writing cycles while saving power.
摘要（中）：

一种非易失性存储器，包括绝缘基板（11），所述绝缘基板具有从所述基板的前表面延伸到其后表面的第一电极（18）; 形成在绝缘基板（11）一侧的第二电极（13）; 以及夹持在所述第一电极（18）和所述第二电极（13）之间并且当跨越所述第一电极（18）和所述第二电极（13）施加电脉冲时其电阻值变化的记录层（12）。 其特征在于，所述绝缘基板（11）具有由有机电介质薄膜（112）和比所述有机介电薄膜（112）薄的无机介电层（111）构成的层叠结构。 其中记录层（12）形成在其上形成无机介电层的一侧。 使用这种非易失性存储器可以在节省电力的同时增加可能的数据写入周期数。

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