发明申请
- 专利标题： Methods of fabricating integrated circuit conductive contact structures including grooves
- 专利标题（中）： 制造集成电路导电接触结构包括沟槽的方法
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申请号： US11039562申请日： 2005-01-20
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公开(公告)号： US20050121755A1公开(公告)日： 2005-06-09
- 发明人: Ju-Cheol Shin , Hyeon-Deok Lee , Hong-Mi Park , In-Sun Park
- 申请人： Ju-Cheol Shin , Hyeon-Deok Lee , Hong-Mi Park , In-Sun Park
- 优先权： KR2002-0035931 20020626
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/8242 ; H01L23/522 ; H01L27/108 ; H01L23/495
摘要：
An integrated circuit includes a substrate and a first insulating layer on the substrate that includes a first hole including a floor and a sidewall. A first conductive contact extends conformally on the sidewall and floor to define a groove in the first hole. A second insulating layer is provided on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is provided in the second hole and in the groove. These integrated circuits are fabricated by forming a first insulating layer on a substrate that includes a first hole including a floor and a sidewall. A first conductive contact is conformally formed on the sidewall and floor to define a groove in the first hole. A second insulating layer is formed on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is formed in the second hole and in the groove.
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