发明申请
- 专利标题: Silicon chip carrier with conductive through-vias and method for fabricating same
- 专利标题(中): 具有导电通孔的硅芯片载体及其制造方法
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申请号: US10729254申请日: 2003-12-05
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公开(公告)号: US20050121768A1公开(公告)日: 2005-06-09
- 发明人: Daniel Edelstein , Paul Andry , Leena Buchwalter , Jon Casey , Sherif Goma , Raymond Horton , Gareth Hougham , Michael Lane , Xiao Liu , Chirag Patel , Edmund Sprogis , Michelle Steen , Brian Sundlof , Cornelia Tsang , George Walker
- 申请人: Daniel Edelstein , Paul Andry , Leena Buchwalter , Jon Casey , Sherif Goma , Raymond Horton , Gareth Hougham , Michael Lane , Xiao Liu , Chirag Patel , Edmund Sprogis , Michelle Steen , Brian Sundlof , Cornelia Tsang , George Walker
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/48
- IPC分类号: H01L21/48 ; H01L21/768 ; H01L23/498 ; H01L23/48 ; H01L21/4763
摘要:
A carrier structure and method for fabricating a carrier structure with through-vias each having a conductive structure with an effective coefficient of thermal expansion which is less than or closely matched to that of the substrate, and having an effective elastic modulus value which is less than or closely matches that of the substrate. The conductive structure may include concentric via fill areas having differing materials disposed concentrically therein, a core of the substrate material surrounded by an annular ring of conductive material, a core of CTE-matched non-conductive material surrounded by an annular ring of conductive material, a conductive via having an inner void with low CTE, or a full fill of a conductive composite material such as a metal-ceramic paste which has been sintered or fused.
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