发明申请
- 专利标题： Method for cleaning a plasma enhanced CVD chamber
- 专利标题（中）： 清洁等离子体增强CVD室的方法
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申请号： US10738740申请日： 2003-12-17
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公开(公告)号： US20050133059A1公开(公告)日： 2005-06-23
- 发明人: Sheng-Wen Chen , Shiu-Ko Jangjian , Hung-Jui Chang , Ying-Lang Wang
- 申请人： Sheng-Wen Chen , Shiu-Ko Jangjian , Hung-Jui Chang , Ying-Lang Wang
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： B08B6/00
- IPC分类号： B08B6/00 ; B08B7/00 ; C23C16/44 ; H01L21/00 ; H01L21/30 ; H01L21/3065
摘要：
A method for plasma cleaning a CVD reactor chamber including providing a plasma enhanced CVD reactor chamber comprising residual deposited material; performing a first plasma process comprising an oxygen containing plasma; performing a second plasma process comprising an argon containing plasma; and, performing a third plasma process comprising a fluorine containing plasma.
公开/授权文献
- US07207339B2 Method for cleaning a plasma enhanced CVD chamber 公开/授权日：2007-04-24
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