公开(公告)号：US20070205516A1

公开(公告)日：2007-09-06

申请号：US11364088

申请日：2006-03-01

申请人： Kei-Wei Chen ,  Sheng-Wen Chen ,  Shiu-Ko Jangjian ,  Shih-Ho Lin ,  Hung-Jui Chang ,  Yu-Ku Lin ,  Ying-Lang Wang

发明人： Kei-Wei Chen ,  Sheng-Wen Chen ,  Shiu-Ko Jangjian ,  Shih-Ho Lin ,  Hung-Jui Chang ,  Yu-Ku Lin ,  Ying-Lang Wang

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53295 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/0234 ,  H01L21/3121 ,  H01L21/3146 ,  H01L21/31633 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： Low-k dielectric layer, semiconductor device, and method for fabricating the same. The low-k dielectric layer comprises a hardened sub-layer sandwiched by two low-k dielectric sub-layers. The hardened sub-layer is formed by a method comprising bombarding the underlying low-k dielectric sub-layer utilizing hydrogen plasma or inert gas plasma. The semiconductor device comprises the low-k dielectric layer overlying an etch stop layer overlying a substrate, and a conductive material embedded in the dielectric layer and the etch stop layer, electrically connecting to the substrate.

摘要翻译： 低k电介质层，半导体器件及其制造方法。 低k电介质层包括夹在两个低k电介质子层之间的硬化子层。 硬化的子层通过利用氢等离子体或惰性气体等离子体轰击下面的低k电介质子层的方法形成。 半导体器件包括覆盖衬底上的蚀刻停止层的低k电介质层，以及电连接到衬底的埋入电介质层和蚀刻停止层中的导电材料。

公开(公告)号：US07207339B2

公开(公告)日：2007-04-24

申请号：US10738740

申请日：2003-12-17

申请人： Sheng-Wen Chen ,  Shiu-Ko Jangjian ,  Hung-Jui Chang ,  Ying-Lang Wang

发明人： Sheng-Wen Chen ,  Shiu-Ko Jangjian ,  Hung-Jui Chang ,  Ying-Lang Wang

IPC分类号： B08B9/00 ,  B08B6/00

CPC分类号： C23C16/4405 ,  B08B7/00 ,  H01L21/67069 ,  Y10S134/902 ,  Y10S438/905

摘要： A method for plasma cleaning a CVD reactor chamber including providing a plasma enhanced CVD reactor chamber comprising residual deposited material; performing a first plasma process comprising an oxygen containing plasma; performing a second plasma process comprising an argon containing plasma; and, performing a third plasma process comprising a fluorine containing plasma.

摘要翻译： 一种用于等离子体清洗CVD反应器室的方法，包括提供包含残余沉积材料的等离子体增强CVD反应器室; 执行包含含氧等离子体的第一等离子体工艺; 执行包括含氩等离子体的第二等离子体工艺; 以及执行包括含氟等离子体的第三等离子体工艺。

公开(公告)号：US20050155625A1

公开(公告)日：2005-07-21

申请号：US10761654

申请日：2004-01-20

申请人： Shiu-Ko Jangjian ,  Sheng-Wen Chen ,  Hung-Jui Chang ,  Chen-Liang Chang ,  Ying-Lang Wang

发明人： Shiu-Ko Jangjian ,  Sheng-Wen Chen ,  Hung-Jui Chang ,  Chen-Liang Chang ,  Ying-Lang Wang

IPC分类号： B08B7/00 ,  B08B7/02 ,  B08B9/00 ,  B08B9/08 ,  C23C16/44

CPC分类号： C23C16/4405 ,  B08B7/00

摘要： A method suitable for cleaning the interior surfaces of a process chamber is disclosed. The invention is particularly effective in removing silicon nitride and silicon dioxide residues from the interior surfaces of a chemical vapor deposition (CVD) chamber. The method includes reacting nitrous oxide (N2O) gas with nitrogen trifluoride (NF3) gas in a plasma to generate nitric oxide (NO) and fluoride (F) radicals. Due to the increased density of nitric oxide radicals generated from the nitrous oxide, the etch and removal rate of the residues on the interior surfaces of the chamber is enhanced. Consequently, the quantity of nitrogen trifluoride necessary to efficiently and expeditiously carry out the chamber cleaning process is reduced.

摘要翻译： 公开了一种适于清洁处理室内表面的方法。 本发明特别有效地从化学气相沉积（CVD）室的内表面去除氮化硅和二氧化硅残余物。 该方法包括在等离子体中使一氧化二氮（N 2 O 2 O）气体与三氟化氮（NF 3 N 3）气体反应以产生一氧化氮（NO）和氟化物（F）基团 。 由于由一氧化二氮产生的一氧化氮自由基的密度增加，腔室内表面上残留物的蚀刻和去除速度增强。 因此，有效且快速地进行室清洁处理所需的三氟化氮的量减少。

公开(公告)号：US20050133059A1

公开(公告)日：2005-06-23

申请号：US10738740

申请日：2003-12-17

申请人： Sheng-Wen Chen ,  Shiu-Ko Jangjian ,  Hung-Jui Chang ,  Ying-Lang Wang

发明人： Sheng-Wen Chen ,  Shiu-Ko Jangjian ,  Hung-Jui Chang ,  Ying-Lang Wang

IPC分类号： B08B6/00 ,  B08B7/00 ,  C23C16/44 ,  H01L21/00 ,  H01L21/30 ,  H01L21/3065

CPC分类号： C23C16/4405 ,  B08B7/00 ,  H01L21/67069 ,  Y10S134/902 ,  Y10S438/905

摘要： A method for plasma cleaning a CVD reactor chamber including providing a plasma enhanced CVD reactor chamber comprising residual deposited material; performing a first plasma process comprising an oxygen containing plasma; performing a second plasma process comprising an argon containing plasma; and, performing a third plasma process comprising a fluorine containing plasma.

摘要翻译： 一种用于等离子体清洗CVD反应器室的方法，包括提供包含残余沉积材料的等离子体增强CVD反应器室; 执行包含含氧等离子体的第一等离子体工艺; 执行包括含氩等离子体的第二等离子体工艺; 以及执行包括含氟等离子体的第三等离子体工艺。

公开(公告)号：US20050074554A1

公开(公告)日：2005-04-07

申请号：US10679764

申请日：2003-10-06

申请人： Shiu-Ko Jangjian ,  Sheng-Wen Chen ,  Miao-Cheng Liao ,  Hung-Jui Chang ,  Ming-Hui Lin ,  Ying-Lang Wang

发明人： Shiu-Ko Jangjian ,  Sheng-Wen Chen ,  Miao-Cheng Liao ,  Hung-Jui Chang ,  Ming-Hui Lin ,  Ying-Lang Wang

IPC分类号： B32B17/06 ,  C23C16/26 ,  C23C16/40 ,  C23C16/56 ,  H01L21/316

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31629 ,  H01L21/31633

摘要： A inter-metal dielectric layer structure and the method of the same are provided. The method includes the following steps. A process gas is introduced to form a low-k dielectric layer over the substrate. A reactant gas is in situ introduced to etch the low-k dielectric layer back and to react with the process gas to form a dielectric layer containing an extra element on the low-k dielectric layer. The extra element is provided by the reactant gas. A volume ratio of the reactant gas to the process gas is larger than about 2. The reactant gas may be a nitrogen fluoride (NF3) gas for providing extra nitrogen (N) or a carbon fluoride (CxFy) gas for providing extra carbon (C).

摘要翻译： 提供金属间介电层结构及其方法。 该方法包括以下步骤。 引入工艺气体以在衬底上形成低k电介质层。 原位引入反应气体以将低k电介质层回蚀刻并与工艺气体反应，形成在低k电介质层上含有额外元素的电介质层。 额外的元素由反应物气体提供。 反应气体与工艺气体的体积比大于约2.反应气体可以是用于提供额外的氮（N）或氟化碳（C x F y）气体的氮氟化物（NF 3）气体，用于提供额外的碳（C ）。

公开(公告)号：US08847286B2

公开(公告)日：2014-09-30

申请号：US13349221

申请日：2012-01-12

申请人： Shiu-Ko Jangjian ,  Kei-Wei Chen ,  Szu-An Wu ,  Ying-Lang Wang

发明人： Shiu-Ko Jangjian ,  Kei-Wei Chen ,  Szu-An Wu ,  Ying-Lang Wang

IPC分类号： H01L27/148

CPC分类号： H01L27/14621 ,  H01L27/14623 ,  H01L27/1464

摘要： An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.

摘要翻译： 图像传感器包括具有相对的第一和第二侧的基板，在基板的第一侧上的多层结构和在基板的第二侧上的感光元件。 光敏元件被配置为接收入射在第一侧并透过多层结构和基板的光。 多层结构包括第一和第二透光层。 第一透光层夹在基板和第二透光层之间。 第一透光层的折射率为基板折射率的60％至90％。 第二透光层的折射率低于第一透光层的折射率，为基板的折射率的40％〜70％。

公开(公告)号：US09982340B2

公开(公告)日：2018-05-29

申请号：US13439127

申请日：2012-04-04

申请人： Chih-Tsung Lee ,  Hung Jui Chang ,  You-Hua Chou ,  Shiu-Ko Jangjian ,  Chung-En Kao ,  Ming-Chin Tsai ,  Huan-Wen Lai

发明人： Chih-Tsung Lee ,  Hung Jui Chang ,  You-Hua Chou ,  Shiu-Ko Jangjian ,  Chung-En Kao ,  Ming-Chin Tsai ,  Huan-Wen Lai

IPC分类号： C23C16/44 ,  C23C16/30 ,  C23C16/509 ,  H01J37/32

CPC分类号： C23C16/4412 ,  C23C16/308 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244

摘要： An apparatus comprises: a shower head having a supply plenum for supplying the gas to the chamber and a vacuum manifold fluidly coupled to the supply plenum; and at least one vacuum system fluidly coupled to the vacuum manifold of the shower head.

公开(公告)号：US08294202B2

公开(公告)日：2012-10-23

申请号：US12754761

申请日：2010-04-06

申请人： Shiu-Ko Jangjian ,  Szu-An Wu ,  Sheng-Wen Chen

发明人： Shiu-Ko Jangjian ,  Szu-An Wu ,  Sheng-Wen Chen

IPC分类号： H01L21/02

CPC分类号： H01L29/66545 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66583 ,  H01L29/7833

摘要： A semiconductor device structure, for improving the metal gate leakage within the semiconductor device. A structure for a metal gate electrode for a n-type Field Effect Transistor includes a capping layer; a first metal layer comprising Ti and Al over the capping layer; a metal oxide layer over the first metal layer; a barrier layer over the metal oxide layer; and a second metal layer over the barrier layer.

摘要翻译： 一种用于改善半导体器件内的金属栅极泄漏的半导体器件结构。 用于n型场效应晶体管的金属栅电极的结构包括封盖层; 在覆盖层上包含Ti和Al的第一金属层; 第一金属层上的金属氧化物层; 金属氧化物层上的阻挡层; 和阻挡层上的第二金属层。

公开(公告)号：US06979656B2

公开(公告)日：2005-12-27

申请号：US10729217

申请日：2003-12-04

申请人： Shiu-Ko Jangjian ,  Jun Wu ,  Chi-Wen Liu ,  Ying-Lung Wang ,  Yi-Lung Cheng ,  Michael Chang ,  Szu-An Wu

发明人： Shiu-Ko Jangjian ,  Jun Wu ,  Chi-Wen Liu ,  Ying-Lung Wang ,  Yi-Lung Cheng ,  Michael Chang ,  Szu-An Wu

IPC分类号： H01L21/31 ,  H01L21/316 ,  H01L21/76 ,  H01L23/532 ,  H01L23/58

CPC分类号： H01L23/5329 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76835 ,  H01L21/7684 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a dielectric layer provides for use of a carbon source material separate from a halogen source material when forming a carbon and halogen doped silicate glass dielectric layer. The use of separate carbon and halogen source materials provides enhanced process latitude when forming the carbon and halogen doped silicate glass dielectric layer. Such a carbon and halogen doped silicate glass dielectric layer having a dielectric constant greater than about 3.0 is particularly useful as an intrinsic planarizing stop layer within a damascene method. A bilayer dielectric layer construction comprising a carbon and halogen doped silicate glass and a carbon doped silicate glass dielectric layer absent halogen doping is useful within a dual damascene method.

摘要翻译： 制造电介质层的方法提供了当形成碳和卤素掺杂的硅酸盐玻璃介电层时与卤素源材料分开的碳源材料的使用。 当形成碳和卤素掺杂的硅酸盐玻璃介电层时，使用单独的碳和卤素源材料提供了增强的工艺自由度。 具有大于约3.0的介电常数的这种碳和卤素掺杂的硅酸盐玻璃介电层特别适用于镶嵌法中的本征平面化停止层。 包含碳和卤素掺杂的硅酸盐玻璃的双层电介质层结构和不含卤素掺杂的碳掺杂的硅酸盐玻璃介电层在双镶嵌方法中是有用的。

公开(公告)号：US20050121751A1

公开(公告)日：2005-06-09

申请号：US10729217

申请日：2003-12-04

申请人： Shiu-Ko Jangjian ,  Jun Wu ,  Chi-Wen Liu ,  Ying-Lung Wang ,  Yi-Lung Cheng ,  Michael Chang ,  Szu-An Wu

发明人： Shiu-Ko Jangjian ,  Jun Wu ,  Chi-Wen Liu ,  Ying-Lung Wang ,  Yi-Lung Cheng ,  Michael Chang ,  Szu-An Wu

IPC分类号： H01L21/31 ,  H01L21/316 ,  H01L21/76 ,  H01L23/532 ,  H01L23/58

CPC分类号： H01L23/5329 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76835 ,  H01L21/7684 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a dielectric layer provides for use of a carbon source material separate from a halogen source material when forming a carbon and halogen doped silicate glass dielectric layer. The use of separate carbon and halogen source materials provides enhanced process latitude when forming the carbon and halogen doped silicate glass dielectric layer. Such a carbon and halogen doped silicate glass dielectric layer having a dielectric constant greater than about 3.0 is particularly useful as an intrinsic planarizing stop layer within a damascene method. A bilayer dielectric layer construction comprising a carbon and halogen doped silicate glass and a carbon doped silicate glass dielectric layer absent halogen doping is useful within a dual damascene method.