发明申请
- 专利标题： Semiconductor device and method of fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US10995081申请日： 2004-11-23
-
公开(公告)号： US20050140004A1公开(公告)日： 2005-06-30
- 发明人: Masahiko Ishiguri , Hirohisa Matsuki , Hiroyuki Yoda , Tadahiro Okamoto , Masamitsu Ikumo , Shuichi Chiba
- 申请人： Masahiko Ishiguri , Hirohisa Matsuki , Hiroyuki Yoda , Tadahiro Okamoto , Masamitsu Ikumo , Shuichi Chiba
- 优先权： JP2003-411592 20031210
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L21/28 ; H01L21/768 ; H01L23/02 ; H01L23/48 ; H01L23/485 ; H01L23/52
摘要：
A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X1/2)≦X2≦(3*X1/4) and (X1/2)≦X3≦(3*X1/4).
公开/授权文献
- US07064436B2 Semiconductor device and method of fabricating the same 公开/授权日：2006-06-20
信息查询
IPC分类:
