发明申请
US20050142781A1 Semiconductor device having an etch stopper formed of a SiN layer by low temperature ALD and method of fabricating the same
审中-公开
具有通过低温ALD由SiN层形成的蚀刻停止件的半导体器件及其制造方法
- 专利标题： Semiconductor device having an etch stopper formed of a SiN layer by low temperature ALD and method of fabricating the same
- 专利标题（中）： 具有通过低温ALD由SiN层形成的蚀刻停止件的半导体器件及其制造方法
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申请号： US11024579申请日： 2004-12-29
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公开(公告)号： US20050142781A1公开(公告)日： 2005-06-30
- 发明人: Kang-soo Chu , Joo-won Lee , Jae-eun Park , Jong-ho Yang
- 申请人： Kang-soo Chu , Joo-won Lee , Jae-eun Park , Jong-ho Yang
- 优先权： KR02-55005 20020911
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/3065 ; H01L21/311 ; H01L21/318 ; H01L21/60 ; H01L21/768 ; H01L21/8234 ; H01L21/8242 ; H01L27/088 ; H01L27/108 ; H01L21/336
摘要：
Provided are a semiconductor device having an etch stopper formed of a nitride film by low temperature atomic layer deposition which can prevent damage to a semiconductor substrate and a method for fabricating the semiconductor device. Damage to the semiconductor substrate under the etch stopper composed of a second nitride film can be prevented by forming a first nitride film using high temperature LPCVD on the semiconductor substrate, forming the etch stopper including the second nitride film by low temperature ALD on the first nitride film, and removing the second nitride film by dry etching, thus taking advantage of the different etch selectivities of the first nitride film and the second nitride film.
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