发明申请
- 专利标题： Asymmetric memory cell
- 专利标题（中）： 不对称记忆单元
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申请号： US10750572申请日： 2003-12-31
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公开(公告)号： US20050145886A1公开(公告)日： 2005-07-07
- 发明人: Ali Keshavarzi , Stephen Tang , Dinesh Somasekhar , Fabrice Paillet , Muhammad Khellah , Yibin Ye , Shih-Lien Lu , Vivek De
- 申请人： Ali Keshavarzi , Stephen Tang , Dinesh Somasekhar , Fabrice Paillet , Muhammad Khellah , Yibin Ye , Shih-Lien Lu , Vivek De
- 主分类号： G11C11/404
- IPC分类号： G11C11/404 ; H01L21/8239 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L29/78
摘要：
Some embodiments provide a memory cell that includes a body region, a source region and a drain region. The body region is doped with charge carriers of a first type, the source region is disposed in the body region and doped with charge carriers of a second type, and the drain region is disposed in the body region and doped with charge carriers of the second type. The body region and the source region form a first junction, the body region and the drain region form a second junction, and a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased.
公开/授权文献
- US06992339B2 Asymmetric memory cell 公开/授权日：2006-01-31
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