System and method for reservation station load dependency matrix
    1.
    发明授权
    System and method for reservation station load dependency matrix 有权
    保留站负载依赖矩阵的系统和方法

    公开(公告)号:US07958336B2

    公开(公告)日:2011-06-07

    申请号:US12164666

    申请日:2008-06-30

    IPC分类号: G06F9/30

    摘要: A device and method may fetch an instruction or micro-operation for execution. An indication may be made as to whether the instruction is dependent upon any source values corresponding to a set of previously fetched instructions. A value may be stored corresponding to each source value from which the first instruction depends. An indication may be made for each of the set of sources of the instruction, whether the source depends on a previously loaded value or source, where indicating may include storing a value corresponding to the indication. The instruction may be executed after the stored values associated with the instruction indicate the dependencies are satisfied.

    摘要翻译: 设备和方法可以获取用于执行的指令或微操作。 可以指示该指令是否取决于对应于一组先前获取的指令的任何源值。 可以存储对应于第一指令所依赖的每个源值的值。 可以针对指令的每个源的指示,源是否依赖于先前加载的值或源,其中指示可以包括存储对应于指示的值。 可以在与指令相关联的存储值表示满足依赖性之后执行指令。

    Asymmetric memory cell
    3.
    发明申请
    Asymmetric memory cell 有权
    不对称记忆单元

    公开(公告)号:US20050145886A1

    公开(公告)日:2005-07-07

    申请号:US10750572

    申请日:2003-12-31

    摘要: Some embodiments provide a memory cell that includes a body region, a source region and a drain region. The body region is doped with charge carriers of a first type, the source region is disposed in the body region and doped with charge carriers of a second type, and the drain region is disposed in the body region and doped with charge carriers of the second type. The body region and the source region form a first junction, the body region and the drain region form a second junction, and a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased.

    摘要翻译: 一些实施例提供了包括体区,源区和漏区的存储单元。 主体区域掺杂有第一类型的电荷载流子,源极区域设置在体区中并掺杂有第二类型的电荷载流子,并且漏极区域设置在体区中并掺杂有第二类型的载流子 类型。 主体区域和源极区域形成第一结,主体区域和漏极区域形成第二结,并且在第一接合点不偏向的情况下,从体区域到源极区域的第一结的导电率基本上 在第二接头不偏差的情况下,小于从体区到漏区的第二结的导电性。

    DATA MOVEMENT IN MEMORY DEVICES
    5.
    发明申请
    DATA MOVEMENT IN MEMORY DEVICES 有权
    内存设备中的数据移动

    公开(公告)号:US20150085589A1

    公开(公告)日:2015-03-26

    申请号:US14037745

    申请日:2013-09-26

    IPC分类号: G11C7/10 G11C7/08

    CPC分类号: G11C7/08 G11C7/065 G11C7/1045

    摘要: Apparatus, systems, and methods for data movement in a memory device are described. In one embodiment, a memory controller comprises logic to move a row of data from a first row of a memory in a first section of a memory device to a second row of memory in a second section of the memory device without passing the data through a communication interface. Other embodiments are also disclosed and claimed.

    摘要翻译: 描述用于存储器件中的数据移动的装置,系统和方法。 在一个实施例中,存储器控制器包括将存储器设备的第一部分中的存储器的第一行的数据行移动到存储器设备的第二部分中的第二行存储器的逻辑,而不用通过数据通过 通讯接口 还公开并要求保护其他实施例。