发明申请
US20050145914A1 Semiconductor device having trench capacitor and fabrication method for the same
审中-公开
具有沟槽电容器的半导体器件及其制造方法
- 专利标题： Semiconductor device having trench capacitor and fabrication method for the same
- 专利标题（中）： 具有沟槽电容器的半导体器件及其制造方法
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申请号： US10892496申请日： 2004-07-16
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公开(公告)号： US20050145914A1公开(公告)日： 2005-07-07
- 发明人: Toshiharu Tanaka , Hideaki Aochi , Masaru Kito , Masaru Kido
- 申请人： Toshiharu Tanaka , Hideaki Aochi , Masaru Kito , Masaru Kido
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 优先权： JPP2004-2061 20040107
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/334 ; H01L21/8242 ; H01L29/94 ; H01L21/20 ; H01L29/76
摘要：
A semiconductor memory includes a semiconductor substrate; a capacitor arranged in a lower portion of the trench; a collar oxide film arranged on a side of the trench above the capacitor and having an upper collar member and a lower collar member, the upper collar member being thinner than the lower collar member so as to provide a height difference therebetween; a storage node arranged on a side of the collar oxide film; a select transistor provided on the semiconductor substrate and having a doped layer in contact with the collar oxide film; and a conductor portion arranged upon the storage node and the doped layer.
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IPC分类:
