- 专利标题： Semiconductor element having protruded bump electrodes
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申请号： US11073714申请日： 2005-03-08
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公开(公告)号： US20050146029A1公开(公告)日： 2005-07-07
- 发明人: Kazushi Higashi , Norihito Tsukahara , Takahiro Yonezawa , Yoshihiko Yagi , Yoshifumi Kitayama , Hiroyuki Otani
- 申请人： Kazushi Higashi , Norihito Tsukahara , Takahiro Yonezawa , Yoshihiko Yagi , Yoshifumi Kitayama , Hiroyuki Otani
- 优先权： JP8-260645 19961001; JP8-289836 19961031
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L23/485 ; H01L21/44 ; H01L23/52
摘要：
A method of forming a bump electrode on an IC electrode includes the steps of forming a ball bond on an IC electrode by a wire bonding apparatus, moving a bonding capillary upward, moving the bonding capillary sideways and then downward, bonding an Au wire to the ball bond portion, and cutting the Au wire. The Au wire is prevented from coming in contact with portions around the ball bond portion other than the ball bond portion by presetting a descent position of the bonding capillary to a position higher than a position in which the ball bond is formed.
公开/授权文献
- US07071090B2 Semiconductor element having protruded bump electrodes 公开/授权日：2006-07-04