发明申请
- 专利标题： Method and apparatus for forming insulating layer
- 专利标题（中）： 用于形成绝缘层的方法和装置
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申请号： US11041303申请日： 2005-01-25
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公开(公告)号： US20050148167A1公开(公告)日： 2005-07-07
- 发明人: Toshiaki Hongoh , Satohiko Hoshino
- 申请人： Toshiaki Hongoh , Satohiko Hoshino
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2002-221585 20020730
- 主分类号： B05D7/24
- IPC分类号： B05D7/24 ; H01J37/32 ; H01L21/3105 ; H01L21/312 ; H01L21/768 ; H01L21/4763 ; H01L21/31 ; H01L21/469
摘要：
In a method for forming an insulating film, a film containing an organic curable material and provided on a substrate for an electronic device is irradiated with an energy plasma produced by a microwave irradiation through a planar antenna member having a plurality of slits to thereby cure the film containing the organic curable material and form the insulating film having a dielectric constant of 3 or less.
公开/授权文献
- US07569497B2 Method and apparatus for forming insulating layer 公开/授权日：2009-08-04
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