Invention Application
- Patent Title: Semiconductor manufacturing method and apparatus
- Patent Title (中): 半导体制造方法和装置
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Application No.: US10486207Application Date: 2002-05-14
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Publication No.: US20050150516A1Publication Date: 2005-07-14
- Inventor: Toshiaki Fujii , Shin Yokoyama
- Applicant: Toshiaki Fujii , Shin Yokoyama
- Priority: JP2001-144350 20010515
- International Application: PCT/JP02/04656 WO 20020514
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/316 ; C25F1/00 ; C25F3/30
Abstract:
The present invention aims to provide processes and equipments for manufacturing semiconductors, according to which oxidation of wafer surfaces can be controlled by simple means and contaminants promoting oxidation and contaminants inviting a decreased yield of wafers can also be totally controlled. To achieve the object above, the present invention provides a process for manufacturing a semiconductor, characterized in that a substrate is treated while exposing the surface of the substrate with a negative ion-enriched gas; and an equipment for manufacturing a semiconductor comprising a gas channel through which a gas to be treated is passed; a negative ion-enriched gas generator consisting of a gas cleaner located at an upstream part of said gas channel and a negative ion generator located at a downstream part thereof: and means for supplying the resulting negative ion-enriched gas to the surface of each substrate.
Information query
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