发明申请
- 专利标题： Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same
- 专利标题（中）： 具有结场效应晶体管的碳化硅半导体器件及其制造方法
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申请号： US10984953申请日： 2004-11-10
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公开(公告)号： US20050151158A1公开(公告)日： 2005-07-14
- 发明人: Rajesh Kumar , Andrei Mihaila , Florin Udrea
- 申请人： Rajesh Kumar , Andrei Mihaila , Florin Udrea
- 优先权： JP2003-385092 20031114
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/04 ; H01L21/337 ; H01L21/8232 ; H01L27/06 ; H01L29/24 ; H01L29/808 ; H01L29/15 ; H01L21/332
摘要：
A silicon carbide semiconductor device includes: a semiconductor substrate including a base substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, which are laminated in this order; a cell portion disposed in the semiconductor substrate and providing an electric part forming portion; and a periphery portion surrounding the cell portion. The periphery portion includes a trench, which penetrates the second and the third semiconductor layers, reaches the first semiconductor layer, and surrounds the cell portion so that the second and the third semiconductor layers are divided by the trench substantially. The periphery portion further includes a fourth semiconductor layer disposed on an inner wall of the trench.
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