发明申请
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10910318申请日： 2004-08-04
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公开(公告)号： US20050151224A1公开(公告)日： 2005-07-14
- 发明人: Kazuhide Abe
- 申请人： Kazuhide Abe
- 优先权： JP006546/2004 20040114
- 主分类号： H01L21/288
- IPC分类号： H01L21/288 ; H01L21/311 ; H01L21/321 ; H01L21/3213 ; H01L21/768 ; H01L21/8238 ; H01L23/522 ; H01L23/532 ; H01L29/00
摘要：
A semiconductor device has a semiconductor substrate, a first insulating film formed on a surface of the semiconductor substrate, a first recess formed in the first insulating film, a first barrier film formed on an inner surface of the first insulating film except a top peripheral region of the first trench, a first conductive film formed in the first trench, and a covering film formed on an upper surface and a top peripheral region of the first conductive film and an upper surface of the first barrier film. The first conductive film includes copper.
公开/授权文献
- US07414314B2 Semiconductor device and manufacturing method thereof 公开/授权日：2008-08-19
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