发明申请
- 专利标题： Semiconductor chip and manufacturing method for the same, and semiconductor device
- 专利标题（中）： 半导体芯片及其制造方法相同，半导体器件
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申请号： US11003769申请日： 2004-12-06
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公开(公告)号： US20050151228A1公开(公告)日： 2005-07-14
- 发明人: Kazumasa Tanida , Mitsuo Umemoto , Yoshihiko Nemoto , Kenji Takahashi
- 申请人： Kazumasa Tanida , Mitsuo Umemoto , Yoshihiko Nemoto , Kenji Takahashi
- 优先权： JP2003-406446 20031204
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/28 ; H01L21/3205 ; H01L21/44 ; H01L21/46 ; H01L21/60 ; H01L21/768 ; H01L23/12 ; H01L23/48 ; H01L23/544 ; H01L25/00 ; H01L25/065
摘要：
The invention provides a semiconductor chip manufacturing method including the steps of: forming a concave portion extended in the thickness direction of a semiconductor substrate which has a front surface and a rear surface and has a function device formed on the front surface, from the front surface; forming an oxidation preventive film made of an inert first metal material by supplying the first metal material onto the inner wall surface of the concave portion; supplying a second metal material containing a metal which is oxidized more easily than the first metal material to the inside of the concave portion after the step of forming the oxidation preventive film; electrically connecting the second metal material supplied to the inside of the concave portion and the function device; and thinning the semiconductor substrate so that the thickness thereof becomes thinner than the depth of the concave portion by removing the semiconductor substrate from the rear surface while leaving the oxidation preventive film.
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