发明申请
US20050153232A1 Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use
有权
具有包含氟磺酰胺基团的聚合物的正性光致抗蚀剂组合物及其使用方法
- 专利标题： Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use
- 专利标题（中）： 具有包含氟磺酰胺基团的聚合物的正性光致抗蚀剂组合物及其使用方法
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申请号： US10753989申请日： 2004-01-08
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公开(公告)号： US20050153232A1公开(公告)日： 2005-07-14
- 发明人: Wenjie Li , Pushkara Varanasi
- 申请人： Wenjie Li , Pushkara Varanasi
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： C08F220/18
- IPC分类号： C08F220/18 ; C08F220/28 ; C08F220/38 ; C08F232/04 ; G03C1/76 ; G03F7/004 ; G03F7/039 ; G03F7/20 ; H01L21/027
摘要：
A positive photoresist composition comprises a radiations sensitive acid generator, and a polymer that may include a first repeating unit derived from a sulfonamide monomer including a fluorosulfonamide functionality, and a second repeating unit, which may include a pendant acid-labile moiety. The positive photoresist composition may also comprise at least one of a solvent, a quencher, and a surfactant. A patterned photoresist layer, made of the positive photoresist composition, may be formed on a substrate, the positive photoresist layer may be exposed to a pattern of imaging radiation, a portion of the positive photoresist layer that is exposed to the pattern of imaging radiation may be removed to reveal a correspondingly patterned substrate for subsequent processing in the manufacture of a semiconductor device.
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