发明申请
US20050153245A1 Method for forming a pattern and method of manufacturing semiconductor device
审中-公开
用于形成图案的方法和制造半导体器件的方法
- 专利标题： Method for forming a pattern and method of manufacturing semiconductor device
- 专利标题（中）： 用于形成图案的方法和制造半导体器件的方法
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申请号： US10940757申请日： 2004-09-15
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公开(公告)号： US20050153245A1公开(公告)日： 2005-07-14
- 发明人: Yasuhiko Sato , Yasunobu Onishi
- 申请人： Yasuhiko Sato , Yasunobu Onishi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2001-103727 20010402; JP2001-143065 20010514
- 主分类号： G03F7/00
- IPC分类号： G03F7/00 ; G03F7/039 ; G03F7/075 ; G03F7/09 ; G03F7/36
摘要：
Disclosed is a method of forming a pattern comprising coating a solution containing a compound having a silicon-nitrogen linkage in the main chain thereof over a surface of a working film to form a mask, replacing the nitrogen in the mask by oxygen, forming a resist film on a surface of the mask, forming a resist pattern by subjecting the resist film to a patterning exposure and to a developing treatment, transcribing the resist pattern to the mask to form a masking pattern, and transcribing the masking pattern to the working film to form a working film pattern.
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