发明申请
US20050158477A1 Deposition apparatus and a deposition method using medium in a supercritical state
审中-公开
沉积装置和使用超临界状态的介质的沉积方法
- 专利标题： Deposition apparatus and a deposition method using medium in a supercritical state
- 专利标题（中）： 沉积装置和使用超临界状态的介质的沉积方法
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申请号： US11017848申请日： 2004-12-22
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公开(公告)号： US20050158477A1公开(公告)日： 2005-07-21
- 发明人: Vincent Vezin , Kenichi Kubo , Takayuki Komiya , Eiichi Kondoh
- 申请人： Vincent Vezin , Kenichi Kubo , Takayuki Komiya , Eiichi Kondoh
- 申请人地址： JP Tokyo JP Kai-Shi
- 专利权人： TOKYO ELECTRON LIMITED,EIICHI KONDOH
- 当前专利权人： TOKYO ELECTRON LIMITED,EIICHI KONDOH
- 当前专利权人地址： JP Tokyo JP Kai-Shi
- 优先权： JP2003-430575 20031225
- 主分类号： C23C16/455
- IPC分类号： C23C16/455 ; B05C11/00 ; C23C4/12 ; C23C16/00 ; C23C26/00 ; C23C26/02 ; H01L21/285 ; H01L21/288 ; H01L21/768
摘要：
A deposition apparatus for supplying a process medium including a medium in a supercritical state and a precursor to a processed substrate so that the processed substrate is deposited on, includes a process vessel, a support stand which is provided in the process vessel, is configured to support the processed substrate, and include a heating part, a medium supply part which is connected to the process vessel via a medium supply path and supplies the process medium to the process vessel, and a medium reflux path configured to reflux the process medium supplied to the process vessel to the medium supply part. The medium supply part includes a first temperature control part configured to control a temperature of the process medium.
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