发明申请
- 专利标题： Polycrystalline Silicon Layer With Nano-grain Structure and Method of Manufacture
- 专利标题（中）： 具有纳米晶粒结构的多晶硅层和制造方法
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申请号： US10707878申请日： 2004-01-20
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公开(公告)号： US20050158924A1公开(公告)日： 2005-07-21
- 发明人: Ashima Chakravarti , Bruce Doris , Romany Ghali , Oleg Gluschenkov , Michael Gribelyuk , Woo-Hyeong Lee , Anita Madan
- 申请人： Ashima Chakravarti , Bruce Doris , Romany Ghali , Oleg Gluschenkov , Michael Gribelyuk , Woo-Hyeong Lee , Anita Madan
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： C23C16/24
- IPC分类号： C23C16/24 ; C23C16/46 ; H01L21/00 ; H01L21/205 ; H01L21/28 ; H01L21/285 ; H01L21/3205 ; H01L29/423 ; H01L29/49 ; H01L29/78
摘要：
A method of forming polycrystalline silicon with ultra-small grain sizes employs a differential heating of the upper and lower sides of the substrate of a CVD apparatus, in which the lower side of the substrate receives considerably more power than the upper side, preferable more than 75% of the power; and in which the substrate is maintained during deposition at a temperature more than 50° C. above the 550° C. crystallization temperature of silicon.