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1.发明申请Polycrystalline Silicon Layer With Nano-grain Structure and Method of Manufacture 失效具有纳米晶粒结构的多晶硅层和制造方法公开(公告)号：US20050158924A1
公开(公告)日：2005-07-21
申请号：US10707878
申请日：2004-01-20
申请人： Ashima Chakravarti , Bruce Doris , Romany Ghali , Oleg Gluschenkov , Michael Gribelyuk , Woo-Hyeong Lee , Anita Madan
发明人： Ashima Chakravarti , Bruce Doris , Romany Ghali , Oleg Gluschenkov , Michael Gribelyuk , Woo-Hyeong Lee , Anita Madan
IPC分类号： C23C16/24 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： C23C16/24 , C23C16/46 , H01L21/28035 , H01L21/32055 , H01L29/4925
摘要： A method of forming polycrystalline silicon with ultra-small grain sizes employs a differential heating of the upper and lower sides of the substrate of a CVD apparatus, in which the lower side of the substrate receives considerably more power than the upper side, preferable more than 75% of the power; and in which the substrate is maintained during deposition at a temperature more than 50° C. above the 550° C. crystallization temperature of silicon.
摘要翻译： 形成超小晶粒尺寸的多晶硅的方法采用CVD装置的衬底的上侧和下侧的差分加热，其中衬底的下侧比上侧受到明显更多的功率，优选大于 75％的权力; 并且其中在超过550℃的硅结晶温度超过50℃的温度下在沉积期间保持基底。
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2.发明申请Deposition of carbon and nitrogen doped poly silicon films, and retarded boron diffusion and improved poly depletion 失效沉积碳和氮掺杂的多晶硅膜，并延缓硼的扩散和改善的多元消耗公开(公告)号：US20050085054A1
公开(公告)日：2005-04-21
申请号：US10684596
申请日：2003-10-15
CPC分类号： C23C16/36 , C23C16/24 , H01L21/02532 , H01L21/0262
摘要： A compound that includes at least Si, N and C in any combination, such as compounds of formula (R—NH)4-nSiXn wherein R is an alkyl group (which may be the same or different), n is 1, 2 or 3, and X is H or halogen (such as, e.g., bis-tertiary butyl amino silane (BTBAS)), may be mixed with silane or a silane derivative to produce a film. A polysilicon silicon film may be grown by mixing silane (SiH4) or a silane derviative and a compound including Si, N and C, such as BTBAS. Films controllably doped with carbon and/or nitrogen (such as layered films) may be grown by varying the reagents and conditions.
摘要翻译： 至少包含任何组合中的Si，N和C的化合物，例如式（R-NH）4-n-SiX n N的化合物，其中R是烷基 （其可以相同或不同），n为1,2或3，X为H或卤素（例如双叔丁基氨基硅烷（BTBAS））可与硅烷或硅烷衍生物混合 制作一部电影。 可以通过混合硅烷（SiH 4 SO 4）或硅烷衍生物和包括Si，N和C的化合物如BTBAS来生长多晶硅硅膜。 可以通过改变试剂和条件来生长可控地掺杂有碳和/或氮的膜（例如层状膜）。
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3.发明授权公开(公告)号：US06576565B1
公开(公告)日：2003-06-10
申请号：US10075152
申请日：2002-02-14
IPC分类号： H01L2131
CPC分类号： C23C16/45572 , C23C16/045 , C23C16/481 , C23C16/52 , H01L21/02164 , H01L21/02271 , H01L21/31612 , H01L21/3185 , H01L21/67109 , H01L21/67115 , H01L27/10861
摘要： An apparatus (110) and method for depositing material on a semiconductor wafer with non-planar structures (114). The wafer (114) is positioned in a chamber (111), and reactive gases (132) are introduced into the chamber (111). The gases (132) and wafer (114) are heated, wherein the gas (132) temperature in the process chamber (111) and in the vicinity of the wafer (114) surface is lower than the temperature of the wafer (114) surface. A material is deposited on the wafer (114) surface using chemical vapor deposition. A gas cooler may be utilized to lower the temperature of the reactive gases (132) while the wafer (114) is heated.
摘要翻译： 一种用于在具有非平面结构（114）的半导体晶片上沉积材料的装置（110）和方法。 晶片（114）定位在室（111）中，反应气体（132）被引入室（111）中。 加热气体（132）和晶片（114），其中处理室（111）中和晶片（114）表面附近的气体（132）温度低于晶片（114）表面的温度 。 使用化学气相沉积将材料沉积在晶片（114）表面上。 当加热晶片（114）时，气体冷却器可用于降低反应气体（132）的温度。
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4.发明申请DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS AND DEPOSITION RATE IMPROVEMENT FOR RTCVD PROCESSES 审中-公开DOPED NITRIDE FILM，DOPED OXIDE FILM AND OTHER DOPED FILMS和沉积速率改进RTCVD工艺公开(公告)号：US20060237846A1
公开(公告)日：2006-10-26
申请号：US11428648
申请日：2006-07-05
IPC分类号： H01L23/52
CPC分类号： H01L29/7843 , C23C16/308 , C23C16/34 , C23C16/401 , H01L21/0214 , H01L21/0217 , H01L21/02271 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/3148 , H01L21/31608 , H01L21/31612 , H01L21/3185 , H01L21/76801 , H01L21/76829 , H01L21/76834 , H01L29/7833 , H01L29/78675
摘要： When forming a silicon nitride film from a nitrogen precursor, using a silicon precursor combination rather than a single silane precursor advantageously increases the deposition rate. For example, adding silane during formation of a silicon nitride film made using BTBAS and ammonia improves (increases) the deposition rate while still yielding a film with a favorably high stress.
摘要翻译： 当从氮前体形成氮化硅膜时，使用硅前体组合而不是单一硅烷前体有利地增加了沉积速率。 例如，在使用BTBAS和氨制备的氮化硅膜形成期间添加硅烷改善（增加）沉积速率，同时仍然产生具有有利的高应力的膜。
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5.发明申请DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS 审中-公开DOPED NITRIDE FILM，DOPED OXIDE FILM和其他DOPED膜公开(公告)号：US20050287747A1
公开(公告)日：2005-12-29
申请号：US10710245
申请日：2004-06-29
IPC分类号： C23C16/30 , C23C16/34 , C23C16/40 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/336 , H01L21/768 , H01L29/786
CPC分类号： H01L29/7843 , C23C16/308 , C23C16/34 , C23C16/401 , H01L21/0214 , H01L21/0217 , H01L21/02271 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/3148 , H01L21/31608 , H01L21/31612 , H01L21/3185 , H01L21/76801 , H01L21/76829 , H01L21/76834 , H01L29/7833 , H01L29/78675
摘要： Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.
摘要翻译： 在形成氮化硅，氧化硅，氮氧化硅或碳化硅膜期间添加至少一种非硅前体（例如锗前体，碳前体等）改善了沉积速率和/或使得可以调谐性能 的电影，如调整电影的压力。 此外，在掺杂的氧化硅或掺杂氮化硅或其它掺杂结构中，掺杂剂的存在可用于测量与掺杂剂相关的信号，作为蚀刻停止或用于在蚀刻期间实现控制。
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公开(公告)号：US6057250A
公开(公告)日：2000-05-02
申请号：US14431
申请日：1998-01-27
申请人： Markus Kirchhoff , Ashima Chakravarti , Matthias Ilg , Kevin A. McKinley , Son V. Nguyen , Michael J. Shapiro
发明人： Markus Kirchhoff , Ashima Chakravarti , Matthias Ilg , Kevin A. McKinley , Son V. Nguyen , Michael J. Shapiro
IPC分类号： H01L21/31 , C23C16/40 , H01L21/316 , H01L21/225 , H01L21/469
CPC分类号： H01L21/02271 , C23C16/401 , H01L21/02131 , H01L21/02211 , H01L21/31625 , H01L21/31629
摘要： An apparatus and method are provided for forming a fluorine doped borophosphosilicate (F-BPSG) glass on a semiconductor device using a low pressure chemical vapor deposition process. The F-BPSG glass exhibits a substantially void-free and particle-free layer on the substrate for structures having gaps as narrow as 0.10 microns and with aspect ratios of 6:1. The reactant gases include sources of boron and phosphorous dopants, oxygen and a mixture of TEOS and FTES. Using a mixture of TEOS and FTES in a low pressure CVD process provides a F-BPSG layer having the above enhanced characteristics. It is a preferred method of the invention to perform the deposition at a temperature of about 750-850.degree. C. and a pressure of 1 to 3 torr to provide for in situ reflow of the F-BPSG during the deposition process. An anneal is also preferred under similar conditions in the same chemical vapor deposition chamber to further planarize the F-BPSG surface. A F-BPSG glass and semiconductor wafers having a layer of fluorine doped BPSG thereon formed by the method and apparatus of the invention are also provided.
摘要翻译： 提供了一种用于在半导体器件上使用低压化学气相沉积工艺形成氟掺杂硼磷硅酸（F-BPSG）玻璃的装置和方法。 F-BPSG玻璃在基板上表现出基本上无空隙和无颗粒的层，其结构具有窄至0.10微米的间隙，纵横比为6:1。 反应物气体包括硼和磷掺杂剂的源，氧和TEOS和FTES的混合物。 在低压CVD工艺中使用TEOS和FTES的混合物提供具有上述增强特性的F-BPSG层。 本发明的优选方法是在约750-850℃的温度和1至3托的压力下进行沉积，以在沉积过程中提供F-BPSG的原位回流。 在相同的化学气相沉积室中的相似条件下还优选退火以进一步平坦化F-BPSG表面。 还提供了通过本发明的方法和装置形成的具有氟掺杂BPSG层的F-BPSG玻璃和半导体晶片。
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公开(公告)号：US20070059894A1
公开(公告)日：2007-03-15
申请号：US10905587
申请日：2005-09-12
IPC分类号： H01L21/336 , H01L21/44 , H01L21/20
CPC分类号： H01L29/7833 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L21/02639 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L2224/05571 , H01L2224/05573 , H01L2224/10126 , H01L2224/13023 , H01L2924/1305 , H01L2924/00
摘要： A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide from a nitride surface in a chemical oxide removal (COR) process and then exposes the heated nitride and oxide surface to a heated germanium containing gas to selectively form germanium only on the nitride surface but not the oxide surface.
摘要翻译： 在半导体制造工艺中选择性地形成锗结构的方法在化学氧化物去除（COR）工艺中从氮化物表面去除天然氧化物，然后将加热的氮化物和氧化物表面暴露于加热的含锗气体，以仅选择性地形成锗 氮化物表面而不是氧化物表面。
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公开(公告)号：US07705385B2
公开(公告)日：2010-04-27
申请号：US10905587
申请日：2005-09-12
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119 , H01L29/00
CPC分类号： H01L29/7833 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L21/02639 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L2224/05571 , H01L2224/05573 , H01L2224/10126 , H01L2224/13023 , H01L2924/1305 , H01L2924/00
摘要： A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide from a nitride surface in a chemical oxide removal (COR) process and then exposes the heated nitride and oxide surface to a heated germanium containing gas to selectively form germanium only on the nitride surface but not the oxide surface.
摘要翻译： 在半导体制造工艺中选择性地形成锗结构的方法在化学氧化物去除（COR）工艺中从氮化物表面去除天然氧化物，然后将加热的氮化物和氧化物表面暴露于加热的含锗气体，以仅选择性地形成锗 氮化物表面而不是氧化物表面。
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9.发明申请DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS 有权DOPED NITRIDE FILM，DOPED OXIDE FILM和其他DOPED膜公开(公告)号：US20080054228A1
公开(公告)日：2008-03-06
申请号：US11924825
申请日：2007-10-26
CPC分类号： H01L29/7843 , C23C16/308 , C23C16/34 , C23C16/401 , H01L21/0214 , H01L21/0217 , H01L21/02271 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/3148 , H01L21/31608 , H01L21/31612 , H01L21/3185 , H01L21/76801 , H01L21/76829 , H01L21/76834 , H01L29/7833 , H01L29/78675
摘要： Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.
摘要翻译： 在形成氮化硅，氧化硅，氮氧化硅或碳化硅膜期间添加至少一种非硅前体（例如锗前体，碳前体等）改善了沉积速率和/或使得可以调谐性能 的电影，如调整电影的压力。 此外，在掺杂的氧化硅或掺杂氮化硅或其它掺杂结构中，掺杂剂的存在可用于测量与掺杂剂相关的信号，作为蚀刻停止或用于在蚀刻期间实现控制。
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公开(公告)号：US20060138566A1
公开(公告)日：2006-06-29
申请号：US11349233
申请日：2006-02-08
IPC分类号： H01L29/76 , H01L21/302
CPC分类号： H01L29/7843 , C23C16/308 , C23C16/34 , C23C16/401 , H01L21/0214 , H01L21/0217 , H01L21/02271 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/3148 , H01L21/31608 , H01L21/31612 , H01L21/3185 , H01L21/76801 , H01L21/76829 , H01L21/76834 , H01L29/7833 , H01L29/78675
摘要： Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.
摘要翻译： 在形成氮化硅，氧化硅，氮氧化硅或碳化硅膜期间添加至少一种非硅前体（例如锗前体，碳前体等）改善了沉积速率和/或使得可以调谐性能 的电影，如调整电影的压力。 此外，在掺杂的氧化硅或掺杂氮化硅或其它掺杂结构中，掺杂剂的存在可用于测量与掺杂剂相关的信号，作为蚀刻停止或用于在蚀刻期间实现控制。
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