发明申请
- 专利标题： Method for forming insulation film
- 专利标题（中）： 绝缘膜形成方法
-
申请号： US10509370申请日： 2003-03-31
-
公开(公告)号： US20050161434A1公开(公告)日： 2005-07-28
- 发明人: Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama
- 申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama
- 申请人地址： JP Minato-ku
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2002-97906 20020329
- 国际申请： PCT/JP03/04091 WO 20030331
- 主分类号： F02D41/02
- IPC分类号： F02D41/02 ; H01L21/3105 ; H01L21/316 ; H01L21/318 ; H01L29/78 ; C23F1/00
摘要：
In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.
公开/授权文献
- US07446052B2 Method for forming insulation film 公开/授权日：2008-11-04
信息查询
