Invention Application
- Patent Title: Schottky with thick trench bottom and termination oxide and process for manufacture
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Application No.: US10766460Application Date: 2004-01-27
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Publication No.: US20050161758A1Publication Date: 2005-07-28
- Inventor: Davide Chiola
- Applicant: Davide Chiola
- Main IPC: H01L21/329
- IPC: H01L21/329 ; H01L21/763 ; H01L27/08 ; H01L27/095 ; H01L29/06 ; H01L29/872 ; H01L21/00 ; H01L29/47 ; H01L29/812 ; H01L29/861 ; H01L31/07 ; H01L31/107 ; H01L31/108
Abstract:
A trench schottky diode which includes a thin insulation layer on the sidewalls of its trenches and a relatively thicker insulation layer at the bottoms of its trenches.
Public/Granted literature
- US06977208B2 Schottky with thick trench bottom and termination oxide and process for manufacture Public/Granted day:2005-12-20
Information query
IPC分类:
