- 专利标题： Method and structure for vertical DRAM devices with self-aligned upper trench shaping
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申请号： US11085663申请日： 2005-03-21
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公开(公告)号： US20050164447A1公开(公告)日： 2005-07-28
- 发明人: Kangguo Cheng , Ramachandra Divakaruni , C. Sung
- 申请人： Kangguo Cheng , Ramachandra Divakaruni , C. Sung
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/336 ; H01L21/8242 ; H01L27/02
摘要：
A method and structure for a memory storage cell in a semiconductor substrate includes forming a dopant source material over a lower portion of a deep trench formed in the substrate. An upper portion of the trench is shaped to a generally rectangular configuration, and the dopant source material is annealed so as to form a buried plate of a trench capacitor. The buried plate is self aligned to the shaped upper portion of the trench.
公开/授权文献
- US07247536B2 Vertical DRAM device with self-aligned upper trench shaping 公开/授权日：2007-07-24
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