专利检索 ap:("Kangguo Cheng" OR "Ramachandra Divakaruni" OR "C. Sung") AND inv:"C. Sung" 第 1 页

1.

发明申请
Method and structure for vertical DRAM devices with self-aligned upper trench shaping 失效

公开(公告)号：US20050164447A1

公开(公告)日：2005-07-28

申请号：US11085663

申请日：2005-03-21

申请人： Kangguo Cheng , Ramachandra Divakaruni , C. Sung

发明人： Kangguo Cheng , Ramachandra Divakaruni , C. Sung

IPC分类号： H01L27/108 , H01L21/336 , H01L21/8242 , H01L27/02

CPC分类号： H01L27/10876 , H01L27/0207 , H01L27/10864 , H01L27/1087 , H01L29/945

摘要： A method and structure for a memory storage cell in a semiconductor substrate includes forming a dopant source material over a lower portion of a deep trench formed in the substrate. An upper portion of the trench is shaped to a generally rectangular configuration, and the dopant source material is annealed so as to form a buried plate of a trench capacitor. The buried plate is self aligned to the shaped upper portion of the trench.