发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US10974922申请日： 2004-10-28
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公开(公告)号： US20050167842A1公开(公告)日： 2005-08-04
- 发明人: Naofumi Nakamura , Noriaki Matsunaga , Sachiyo Ito , Masahiko Hasunuma , Takeshi Nishioka
- 申请人： Naofumi Nakamura , Noriaki Matsunaga , Sachiyo Ito , Masahiko Hasunuma , Takeshi Nishioka
- 优先权： JP2004-008303 20040115; JP2004-195731 20040701
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/00 ; H01L21/3205 ; H01L21/822 ; H01L23/00 ; H01L23/522 ; H01L23/58 ; H01L27/04 ; H01L27/10 ; H01L29/40
摘要：
A semiconductor device includes a first insulating layer provided above a semiconductor substrate. The first insulating layer includes a layer consisting essentially of a material having a relative dielectric constant smaller than 3. The first insulating layer includes a first integral structure consisting of a plug and wiring. The upper surface of the wiring is flush with the upper surface of the first insulating layer, and the lower surface of the plug is flush with the lower surface of the first insulating layer. A region protective member is formed of a second integral structure consisting of a plug and wiring. The second integral structure extends from the upper surface of the first insulating layer to the lower surface of the first insulating layer. The region protective member surrounds one of first to n-th regions (n being a natural 2 or more) partitioned by a boundary region on a horizontal plane.
公开/授权文献
- US07339256B2 Semiconductor device 公开/授权日：2008-03-04
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