发明申请
US20050178656A1 MOCVD PGO thin films deposited on indium oxide for feram applications
失效
沉积在氧化铟上的MOCVD PGO薄膜用于动漫应用
- 专利标题： MOCVD PGO thin films deposited on indium oxide for feram applications
- 专利标题（中）： 沉积在氧化铟上的MOCVD PGO薄膜用于动漫应用
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申请号： US10780919申请日： 2004-02-17
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公开(公告)号： US20050178656A1公开(公告)日： 2005-08-18
- 发明人: Tingkai Li , Sheng Hsu , Bruce Ulrich
- 申请人： Tingkai Li , Sheng Hsu , Bruce Ulrich
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： C23C14/08
- IPC分类号： C23C14/08 ; C23C14/32 ; C23C14/58 ; C23C16/00 ; C23C16/40 ; C23C16/56
摘要：
Methods of forming depositing a ferroelectric thin film, such as PGO, by preparing a substrate with an upper surface of silicon, silicon oxide, or a high-k material, such as hafnium oxide, zirconium oxide, aluminum oxide, and lanthanum oxide, depositing an indium oxide film over the substrate, and then depositing the ferroelectric film using MOCVD.
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