发明申请
- 专利标题： High-frequency wiring structure and method for producing the same
- 专利标题（中）： 高频布线结构及其制造方法
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申请号： US11050112申请日： 2005-02-02
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公开(公告)号： US20050179129A1公开(公告)日： 2005-08-18
- 发明人: Yorihiko Sasaki
- 申请人： Yorihiko Sasaki
- 专利权人： ALPS ELECTRIC CO., LTD.
- 当前专利权人： ALPS ELECTRIC CO., LTD.
- 优先权： JP2004-038282 20040216
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/469 ; H01L21/48 ; H01L21/50 ; H01L21/68 ; H01L23/053 ; H01L23/12 ; H01L23/52 ; H01P3/08 ; H01P11/00 ; H05K1/02 ; H05K3/02 ; H05K3/04 ; H05K3/10 ; H05K3/18 ; H05K3/20 ; H05K3/22
摘要：
A high-frequency wiring structure includes a microstrip line having a ground conductor, a dielectric disposed on the ground conductor, and a transmission conductor that is at least partially disposed in the dielectric. The transmission conductor is defined by a flat bottom parallel to the ground conductor, a pair of flat sides that are perpendicular to the ground conductor and are positioned on both sides of the flat bottom in the wiring width direction, and curved parts that continuously join the flat bottom and the pair of flat sides. The curved parts have a radius of curvature within the range of 5% to 50% of the thickness of the transmission conductor.
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