There is provided a method of forming a fine pattern by using a highly practicable fluorine-containing polymer which has a high transparency to exposure light having a short wavelength such as F2 laser and can improve dry etching resistance without remarkably lowering transparency. The method comprises (I) a step for preparing a resist composition comprising (a) a fluorine-containing polymer having protective group, (b) a photoacid generator and (c) a solvent; (II) a step for forming a resist film comprising the above-mentioned resist composition on a substrate or on a given layer on the substrate; (III) a step for exposing by selectively irradiating given areas of the resist film with energy ray, and (IV) a step for subjecting the exposed resist film to developing treatment and selectively removing the exposed portions of the resist film to form a fine pattern, in which the fluorine-containing polymer (a) having protective group is a fluorine-containing polymer comprising a structural unit (M2-1A) derived from a norbornene derivative having OH group and a structural unit (M2-1B) derived from a norbornene derivative having a saturated hydrocarbon group containing bicyclo saturated hydrocarbon structure as a protective group.