公开(公告)号：US20050181304A1

公开(公告)日：2005-08-18

申请号：US11057832

申请日：2005-02-15

申请人： Takayuki Araki ,  Tsuneo Yamashita ,  Takuji Ishikawa ,  Tomohiro Yoshida ,  Takuya Hagiwara ,  Takamitsu Furukawa

发明人： Takayuki Araki ,  Tsuneo Yamashita ,  Takuji Ishikawa ,  Tomohiro Yoshida ,  Takuya Hagiwara ,  Takamitsu Furukawa

IPC分类号： C08F214/18 ,  C08F232/08 ,  G03C1/492 ,  G03F7/004 ,  G03F7/033 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0046 ,  G03F7/0395 ,  G03F7/0397

摘要： There is provided a method of forming a fine pattern by using a highly practicable fluorine-containing polymer which has a high transparency to exposure light having a short wavelength such as F2 laser and can improve dry etching resistance without remarkably lowering transparency. The method comprises (I) a step for preparing a resist composition comprising (a) a fluorine-containing polymer having protective group, (b) a photoacid generator and (c) a solvent; (II) a step for forming a resist film comprising the above-mentioned resist composition on a substrate or on a given layer on the substrate; (III) a step for exposing by selectively irradiating given areas of the resist film with energy ray, and (IV) a step for subjecting the exposed resist film to developing treatment and selectively removing the exposed portions of the resist film to form a fine pattern, in which the fluorine-containing polymer (a) having protective group is a fluorine-containing polymer comprising a structural unit (M2-1A) derived from a norbornene derivative having OH group and a structural unit (M2-1B) derived from a norbornene derivative having a saturated hydrocarbon group containing bicyclo saturated hydrocarbon structure as a protective group.

摘要翻译： 提供了一种通过使用对具有短波长的诸如F 2激光的曝光光具有高透明度的高度实用的含氟聚合物形成精细图案的方法，并且可以提高无干蚀刻电阻，而无需 显着降低透明度。 该方法包括（I）制备抗蚀剂组合物的步骤，其包含（a）具有保护基的含氟聚合物，（b）光致酸产生剂和（c）溶剂; （II）在衬底上或衬底上的给定层上形成包含上述抗蚀剂组合物的抗蚀剂膜的步骤; （III）通过用能量射线选择性地照射抗蚀剂膜的给定区域进行曝光的步骤，以及（IV）对曝光的抗蚀剂膜进行显影处理并选择性地除去抗蚀剂膜的曝光部分以形成精细图案的步骤 其中，具有保护基的含氟聚合物（a）为含有衍生自具有OH基的降冰片烯衍生物的结构单元（M2-1A）和来自降冰片烯的结构单元（M2-1B）的含氟聚合物 具有含有双环饱和烃结构的饱和烃基作为保护基的衍生物。

公开(公告)号：US20090004576A1

公开(公告)日：2009-01-01

申请号：US12134250

申请日：2008-06-06

申请人： Takamitsu Furukawa

发明人： Takamitsu Furukawa

IPC分类号： G03F7/20 ,  G03F1/00

CPC分类号： G03F7/70641 ,  G03F1/50 ,  G03F7/70433 ,  G03F7/70608

摘要： A resist pattern forming method capable of obtaining a smooth resist pattern. An exemplary method may utilize a photomask including a plurality of mask cells arranged in the form of a matrix. The length of one side of each of the mask cells may be smaller than the length corresponding to the resolution limit of the optical system of the exposure device. Each mask cell may have one or both of a light transmission region and a light shielding region, and the intensity of light passing through each mask cell may be determined by the ratio of the area of the light transmission region to the area of the mask cell. The photomask may be positioned at a vertical focus position other than the optimal focus position. The resist film may be exposed with light and may then be developed to produce the resist pattern.

摘要翻译： 一种抗蚀剂图案形成方法，其能够获得光滑的抗蚀剂图案。 示例性方法可以利用包括以矩阵形式布置的多个掩模单元的光掩模。 每个掩模单元的一侧的长度可以小于对应于曝光装置的光学系统的分辨率极限的长度。 每个掩模单元可以具有光透射区域和遮光区域中的一个或两个，并且通过每个掩模单元的光的强度可以由光透射区域的面积与掩模单元的面积的比率来确定 。 光掩模可以位于除了最佳焦点位置之外的垂直对焦位置。 抗蚀剂膜可以用光曝光，然后可以显影以产生抗蚀剂图案。

公开(公告)号：US06838643B2

公开(公告)日：2005-01-04

申请号：US10197598

申请日：2002-07-18

申请人： Shouzou Kobayashi ,  Takamitsu Furukawa ,  Keisuke Tanaka ,  Kouhei Shimoyama ,  Akira Watanabe ,  Tadashi Nishimuro ,  Koki Muto ,  Azusa Yanagisawa ,  Katsuo Oshima

发明人： Shouzou Kobayashi ,  Takamitsu Furukawa ,  Keisuke Tanaka ,  Kouhei Shimoyama ,  Akira Watanabe ,  Tadashi Nishimuro ,  Koki Muto ,  Azusa Yanagisawa ,  Katsuo Oshima

IPC分类号： G03F7/30 ,  H01L21/00 ,  H01L21/027 ,  H05B3/00 ,  F27B5/14

CPC分类号： H01L21/67248 ,  H01L21/67109

摘要： An apparatus for baking a semiconductor wafer having a resist pattern thereon includes a baking oven in which the semiconductor wafer is placed and heated, and a first hot plate which is provided in the baking oven to heat an entire bottom surface of the semiconductor wafer. The apparatus also includes a gas supply unit having a gas introducing path, through which the purge gas is introduced into the baking oven, and a gas exhaust path, through which the purge gas is exhausted out of the baking oven. A gas temperature controller controls a temperature of the purge gas in order that the purge gas flowing around a peripheral edge or outer portion of the wafer has a higher temperature than that around the center or inner portion of the wafer.

公开(公告)号：US06956641B2

公开(公告)日：2005-10-18

申请号：US10317156

申请日：2002-12-12

申请人： Takamitsu Furukawa

发明人： Takamitsu Furukawa

IPC分类号： G03F7/20 ,  G03F7/40 ,  H01L21/027 ,  G03B27/54 ,  G03B27/68 ,  G03B27/72

CPC分类号： G03F7/2024 ,  G03F7/40

摘要： A device for exposure of an object surface having a predetermined shrinkage rate during a baking process of the object. The device includes an optical system having a light source irradiating light towards a target location. A filter is provided between the target location and the light source. The filter has a transmission rate that is adjustable to at least three different levels and which passes light from the light source therethrough.

摘要翻译： 一种在物体的烘烤过程中暴露具有预定收缩率的物体表面的装置。 该装置包括具有朝向目标位置照射光的光源的光学系统。 在目标位置和光源之间提供过滤器。 滤波器具有可调节至少三个不同电平的透射率，并且使来自光源的光透过。

公开(公告)号：US06511794B1

公开(公告)日：2003-01-28

申请号：US09664003

申请日：2000-09-18

申请人： Takamitsu Furukawa

发明人： Takamitsu Furukawa

IPC分类号： G03F720

CPC分类号： G03F7/2024 ,  G03F7/40

摘要： A method of forming a resist pattern and an exposure device using the method are provided in which a relatively large pattern, whose dimension is greater than a resolution limit of a KrF exposure technique, and an extremely fine pattern, whose dimension is less than or equal to the resolution limit of the KrF exposure technique, can be formed well and simultaneously. Two patterns are exposed simultaneously by deep UV light of a wavelength of 248 nm on a resist film 10 formed of TDUR-P015 and formed on a surface of an SiO2 film 12. The two patterns are: a circular pattern of a dimension which is made larger, in accordance with a shrinkage rate, than a finally required pattern dimension, which circular pattern is formed at regions to be shrunk; and a circular pattern of a dimension which is finally required, which circular pattern is formed at regions not to be shrunk. A UV light exposure amount, which is of an amount such that heat resistance of the TDUR-P015 forming the resist film 10 improves and the resist pattern does not shrink, is applied only onto the regions not to be shrunk of the resist pattern obtained by development. Then, high temperature bake processing at 135° C. for 60 seconds is carried out.

摘要翻译： 提供了使用该方法形成抗蚀剂图案和曝光装置的方法，其中尺寸大于KrF曝光技术的分辨率极限的相对大的图案和尺寸小于或等于的极细图案 到KrF曝光技术的分辨率极限，可以很好地同时形成。 在由TDUR-P015形成的抗蚀剂膜10上形成的波长为248nm的深紫外光同时曝光两种图案，并形成在SiO 2膜12的表面上。两种图案是：形成尺寸的圆形图案 根据收缩率比最终需要的图案尺寸更大，该圆形图案在要收缩的区域形成; 并且最终需要尺寸的圆形图案，在不缩小的区域形成圆形图案。 UV光曝光量，其量使得形成抗蚀剂膜10的TDUR-P015的耐热性提高并且抗蚀剂图案不收缩的量仅被施加到不被收缩的抗蚀剂图案的区域上 发展。 然后，进行135℃，60秒钟的高温烘烤处理。

公开(公告)号：US06455438B1

公开(公告)日：2002-09-24

申请号：US09662855

申请日：2000-09-15

申请人： Azusa Yanagisawa ,  Koki Muto ,  Tadashi Nishimuro ,  Katsuo Oshima ,  Akira Watanabe ,  Akihiko Nara ,  Kouhei Shimoyama ,  Keisuke Tanaka ,  Takamitsu Furukawa ,  Shouzou Kobayashi

发明人： Azusa Yanagisawa ,  Koki Muto ,  Tadashi Nishimuro ,  Katsuo Oshima ,  Akira Watanabe ,  Akihiko Nara ,  Kouhei Shimoyama ,  Keisuke Tanaka ,  Takamitsu Furukawa ,  Shouzou Kobayashi

IPC分类号： H01L2100

CPC分类号： H01L21/0273 ,  G03F7/40 ,  H01L21/31144

摘要： According to the present invention, a semiconductor device is fabricated by the following processes. First, a film to be etched is formed on a semiconductor substrate. On the film to be etched is formed a resist film. Then, a first pattern group including first patterns having a first size and a second pattern group including second patterns arranged outside of the first pattern group are formed by exposure. The resist film is then developed to form openings in the resist film so that the resultant openings correspond to the first and second patterns, respectively. The openings are then made smaller by annealing the resist film. The aforementioned processes enables openings having substantially the same shape to be formed in the film to be etched.

摘要翻译： 根据本发明，通过以下方法制造半导体器件。 首先，在半导体基板上形成被蚀刻的膜。 在被蚀刻的膜上形成抗蚀剂膜。 然后，通过曝光形成包括具有第一尺寸的第一图案和包括布置在第一图案组外部的第二图案的第二图案组的第一图案组。 然后将抗蚀剂膜显影以在抗蚀剂膜中形成开口，使得所得到的开口分别对应于第一和第二图案。 然后通过退火抗蚀剂膜使开口变小。 上述处理使得能够在待蚀刻的膜中形成具有基本相同形状的开口。

公开(公告)号：US07972752B2

公开(公告)日：2011-07-05

申请号：US12134250

申请日：2008-06-06

申请人： Takamitsu Furukawa

发明人： Takamitsu Furukawa

IPC分类号： G03F1/00

CPC分类号： G03F7/70641 ,  G03F1/50 ,  G03F7/70433 ,  G03F7/70608

摘要： A resist pattern forming method capable of obtaining a smooth resist pattern. An exemplary method may utilize a photomask including a plurality of mask cells arranged in the form of a matrix. The length of one side of each of the mask cells may be smaller than the length corresponding to the resolution limit of the optical system of the exposure device. Each mask cell may have one or both of a light transmission region and a light shielding region, and the intensity of light passing through each mask cell may be determined by the ratio of the area of the light transmission region to the area of the mask cell. The photomask may be positioned at a vertical focus position other than the optimal focus position. The resist film may be exposed with light and may then be developed to produce the resist pattern.

摘要翻译： 一种抗蚀剂图案形成方法，其能够获得光滑的抗蚀剂图案。 示例性方法可以利用包括以矩阵形式布置的多个掩模单元的光掩模。 每个掩模单元的一侧的长度可以小于对应于曝光装置的光学系统的分辨率极限的长度。 每个掩模单元可以具有光透射区域和遮光区域中的一个或两个，并且通过每个掩模单元的光的强度可以由光透射区域的面积与掩模单元的面积的比率来确定 。 光掩模可以位于除了最佳焦点位置之外的垂直对焦位置。 抗蚀剂膜可以用光曝光，然后可以显影以产生抗蚀剂图案。

公开(公告)号：US07771897B2

公开(公告)日：2010-08-10

申请号：US11717694

申请日：2007-03-14

申请人： Takamitsu Furukawa

发明人： Takamitsu Furukawa

IPC分类号： G03F1/00 ,  G03F9/00 ,  G03C5/00 ,  G06F17/50

CPC分类号： G03F7/0005 ,  G03F1/50

摘要： A method includes; a step of setting square mask cells in rows and columns on a transparent mask-substrate surface by demarcating by orthogonal lines of equal intervals, each of which has one side having a length smaller than a resolution limit of an optical system; a step of setting the resist thicknesses corresponding to the mask cells; a step of assigning normalized light-intensities respectively to the mask cells as transmission intensities, corresponding to the film thicknesses and having three or more different values; a step of setting each of the mask cells a light-transmission area and a shade-area and determining a transmission-light intensity by an transmission area ratio; a step of providing shade films on the shade areas of the mask substrate.

摘要翻译： 一种方法包括： 通过用相等间隔的正交线划分，每一个具有一个长度小于光学系统的分辨率极限的一侧，在透明掩模 - 衬底表面上以行和列的方式设置方形掩模单元的步骤; 设置对应于掩模单元的抗蚀剂厚度的步骤; 分配给掩模单元的归一化光强度作为对应于膜厚度并具有三个或更多个不同值的透射强度的步骤; 将每个掩模单元设置为透光区域和阴影区域的步骤，并且以透射面积比确定透射光强度; 在掩模基板的遮蔽区域上设置遮光膜的步骤。

公开(公告)号：US20070224521A1

公开(公告)日：2007-09-27

申请号：US11717694

申请日：2007-03-14

申请人： Takamitsu Furukawa

发明人： Takamitsu Furukawa

IPC分类号： G03F9/00 ,  G03F1/00

CPC分类号： G03F7/0005 ,  G03F1/50

摘要： A method includes; a step of setting square mask cells in rows and columns on a transparent mask-substrate surface by demarcating by orthogonal lines of equal intervals, each of which has one side having a length smaller than a resolution limit of an optical system; a step of setting the resist thicknesses corresponding to the mask cells; a step of assigning normalized light-intensities respectively to the mask cells as transmission intensities, corresponding to the film thicknesses and having three or more different values; a step of setting each of the mask cells a light-transmission area and a shade-area and determining a transmission-light intensity by an transmission area ratio; a step of providing shade films on the shade areas of the mask substrate.

摘要翻译： 一种方法包括： 通过用相等间隔的正交线划分，每一个具有一个长度小于光学系统的分辨率极限的一侧，在透明掩模 - 衬底表面上以行和列的方式设置方形掩模单元的步骤; 设置对应于掩模单元的抗蚀剂厚度的步骤; 分配给掩模单元的归一化光强度作为对应于膜厚度并具有三个或更多个不同值的透射强度的步骤; 将每个掩模单元设置为透光区域和阴影区域的步骤，并且以透射面积比确定透射光强度; 在掩模基板的遮蔽区域上设置遮光膜的步骤。