发明申请
- 专利标题： Magnetoresistive element and magnetic memory device
- 专利标题（中）： 磁阻元件和磁存储器件
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申请号： US11110869申请日： 2005-04-21
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公开(公告)号： US20050185347A1公开(公告)日： 2005-08-25
- 发明人: Koichiro Inomata , Kentaro Nakajima , Yoshiaki Saito , Masayuki Sagoi , Tatsuya Kishi
- 申请人： Koichiro Inomata , Kentaro Nakajima , Yoshiaki Saito , Masayuki Sagoi , Tatsuya Kishi
- 申请人地址： JP Minato-ku
- 专利权人： KABUSHI KAISHA TOSHIBA
- 当前专利权人： KABUSHI KAISHA TOSHIBA
- 当前专利权人地址： JP Minato-ku
- 优先权： JP11-262327 19990916; JP11-263741 19990917; JP2000-265663 20000901; JP2000-265664 20000901
- 主分类号： G01R33/09
- IPC分类号： G01R33/09 ; G11B5/39 ; G11C11/15 ; G11C11/16 ; H01F10/32 ; H01L21/8246 ; H01L27/22 ; H01L43/08 ; G11B5/33
摘要：
A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
公开/授权文献
- US07038894B2 Magnetoresistive element and magnetic memory device 公开/授权日：2006-05-02
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