发明申请
- 专利标题： Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
- 专利标题（中）： 化学气相沉积的高导电性，粘附的钌薄膜
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申请号： US10803750申请日： 2004-03-18
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公开(公告)号： US20050186341A1公开(公告)日： 2005-08-25
- 发明人: Bryan Hendrix , James Welch , Steven Bilodeau , Jeffrey Roeder , Chongying Xu , Thomas Baum
- 申请人： Bryan Hendrix , James Welch , Steven Bilodeau , Jeffrey Roeder , Chongying Xu , Thomas Baum
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; C23C16/02 ; C23C16/16 ; C23C16/18 ; C23C16/44 ; C23C16/455
摘要：
A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
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