发明申请
US20050186765A1 Gate electrode dopant activation method for semiconductor manufacturing
有权
用于半导体制造的栅电极掺杂剂激活方法
- 专利标题： Gate electrode dopant activation method for semiconductor manufacturing
- 专利标题（中）： 用于半导体制造的栅电极掺杂剂激活方法
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申请号： US10784904申请日： 2004-02-23
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公开(公告)号： US20050186765A1公开(公告)日： 2005-08-25
- 发明人: Yi Ma , Khaled Ahmed , Kevin Cunningham , Robert McIntosh , Abhilash Mayur , Haifan Liang , Mark Yam , Toi Leung , Christopher Olsen , Shulin Wang , Majeed Foad , Gary Miner
- 申请人： Yi Ma , Khaled Ahmed , Kevin Cunningham , Robert McIntosh , Abhilash Mayur , Haifan Liang , Mark Yam , Toi Leung , Christopher Olsen , Shulin Wang , Majeed Foad , Gary Miner
- 主分类号： H01L21/268
- IPC分类号： H01L21/268 ; H01L21/28 ; H01L21/324 ; H01L21/36 ; C30B1/00 ; H01L21/20 ; H01L21/425 ; H01L21/44
摘要：
In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.
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