发明申请
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11055707申请日： 2005-02-11
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公开(公告)号： US20050189637A1公开(公告)日： 2005-09-01
- 发明人: Yoshio Okayama , Akira Suzuki , Koujiro Kameyama , Mitsuo Umemoto , Kenji Takahashi , Hiroshi Terao , Masataka Hoshino
- 申请人： Yoshio Okayama , Akira Suzuki , Koujiro Kameyama , Mitsuo Umemoto , Kenji Takahashi , Hiroshi Terao , Masataka Hoshino
- 申请人地址： JP Moriguchi-city JP Minato-ku JP Kawasaki-shi JP Minato-ku
- 专利权人： Sanyo Electric Co., Ltd.,KABUSHIKI KAISHA TOSHIBA,FUJITSU LIMITED,NEC Corporation
- 当前专利权人： Sanyo Electric Co., Ltd.,KABUSHIKI KAISHA TOSHIBA,FUJITSU LIMITED,NEC Corporation
- 当前专利权人地址： JP Moriguchi-city JP Minato-ku JP Kawasaki-shi JP Minato-ku
- 优先权： JP2004-040403 20040217
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/3205 ; H01L21/60 ; H01L21/768 ; H01L23/12 ; H01L23/31 ; H01L23/48 ; H01L23/495
摘要：
A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.
公开/授权文献
- US07732925B2 Semiconductor device and manufacturing method thereof 公开/授权日：2010-06-08