发明申请
- 专利标题: Semiconductor circuit device having hierarchical power supply structure
- 专利标题(中): 具有分层电源结构的半导体电路装置
-
申请号: US10628384申请日: 2003-07-29
-
公开(公告)号: US20050189818A1公开(公告)日: 2005-09-01
- 发明人: Tsukasa Ooishi , Hideto Hidaka
- 申请人: Tsukasa Ooishi , Hideto Hidaka
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 优先权: JP10-327058(P) 19981117
- 主分类号: H03K19/00
- IPC分类号: H03K19/00 ; G05F1/10 ; G11C5/06 ; G11C5/14 ; G11C11/407 ; H01H47/00 ; H02B1/24 ; H02J1/00 ; H02J3/00 ; H03H11/26
摘要:
Resistance elements are inserted into a main power supply line and a main ground line so that offset differential amplifiers receive voltages developed across the same. The differential amplifiers control transistors connected to a sub power supply line and a sub ground line. Thus, a leakage current flowing from the sub power supply line to the main ground line and that flowing from the main power supply line to the sub ground line are regularly kept constant. Consequently, it is possible to prevent an operation delay in an initial stage of a standby state while keeping an effect of reducing a subthreshold leakage current in a semiconductor circuit device having a hierarchical power supply structure.
公开/授权文献
信息查询