发明申请
- 专利标题： Method for forming semiconductor device
- 专利标题（中）： 半导体器件形成方法
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申请号： US11102445申请日： 2005-04-07
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公开(公告)号： US20050191860A1公开(公告)日： 2005-09-01
- 发明人: Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
- 申请人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
- 申请人地址： JP Osaka
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址： JP Osaka
- 优先权： JP2003-175882 20030620
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/3105 ; H01L21/312
摘要：
A method for forming a semiconductor device includes the steps of forming, on a substrate, a flowable film made of an insulating material with flowability; planarizing a top face of the flowable film by pressing the flowable film with a pressing member; forming a solidified film by annealing the flowable film at a first temperature with the pressing member pressed against the flowable film; and forming a burned film with a flat top face by burning the solidified film through annealing of the solidified film at a second temperature higher than the first temperature.
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