发明申请
- 专利标题： Memory Device
- 专利标题（中）： 存储设备
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申请号： US11121011申请日： 2005-05-04
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公开(公告)号： US20050201139A1公开(公告)日： 2005-09-15
- 发明人: Yasuhiro Shimada , Yoshihisa Kato , Keisuke Tanaka , Daisuke Ueda
- 申请人： Yasuhiro Shimada , Yoshihisa Kato , Keisuke Tanaka , Daisuke Ueda
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 优先权： JP2002-187222 20020627
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; G11C11/22 ; H01L21/02 ; H01L21/316 ; H01L21/8246 ; H01L27/10 ; H01L27/108 ; H01L27/115
摘要：
A memory device includes memory cells each having a capacitor including a lower electrode, a ferroelectric film and an upper electrode which are formed in this order over a substrate made of silicon. The ferroelectric film is selectively grown on the lower electrode. Such selective formation of the ferroelectric film on the lower electrode having a desired shape prevents a damaged portion from occurring in the ferroelectric film, thus making it possible to downsize the memory cells.
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